| Part Number | Manufacturer | Description | Datasheet |
|---|---|---|---|
| 0201CG150K500NT | GuangDong FengHua Advanced Technology Holoing Co.Ltd. | Accuracy: ±10% Capacitance: 15pF Rated voltage: 50V Temperature drift coefficient (dielectric material): C0G Material: C0G | download |
| 0402CG3R5C500NT | GuangDong FengHua Advanced Technology Holoing Co.Ltd. | Accuracy: ±0.25pF Capacitance: 3.5pF Rated voltage: 50V Temperature drift coefficient (dielectric material): C0G | download |
| 0402CG900J500NT | GuangDong FengHua Advanced Technology Holoing Co.Ltd. | Accuracy: ±5% Capacitance: 90pF Rated voltage: 50V Temperature drift coefficient (dielectric material): C0G | download |
| 0201CG390J500NT | GuangDong FengHua Advanced Technology Holoing Co.Ltd. | Accuracy: ±5% Capacitance: 39pF Rated voltage: 50V Temperature drift coefficient (dielectric material): C0G Material: C0G | download |
| 0402X225K6R3NT | GuangDong FengHua Advanced Technology Holoing Co.Ltd. | Accuracy: ±10% Capacitance: 2.2uF Rated voltage: 6.3V Temperature drift coefficient (dielectric material): X5R | download |
| 0603CG101J201NT | GuangDong FengHua Advanced Technology Holoing Co.Ltd. | Accuracy: ±5% Capacitance: 100pF Rated voltage: 200V Temperature drift coefficient (dielectric material): C0G Material: C0G | download |
| 0805B105K160NT | GuangDong FengHua Advanced Technology Holoing Co.Ltd. | Accuracy: ±10% Capacitance: 1uF Rated voltage: 16V Temperature drift coefficient (dielectric material): X7R Material: X7R | download |
| 0402CG1R8B500NT | GuangDong FengHua Advanced Technology Holoing Co.Ltd. | Accuracy: ±0.1pF Capacitance: 1.8pF Rated voltage: 50V Temperature drift coefficient (dielectric material): C0G Material: C0G | download |
| 0805B821K500NT | GuangDong FengHua Advanced Technology Holoing Co.Ltd. | Accuracy: ±10% Capacitance: 820pF Rated voltage: 50V Temperature drift coefficient (dielectric material): X7R Material: X7R | download |
| 0402X105M6R3NT | GuangDong FengHua Advanced Technology Holoing Co.Ltd. | Accuracy: ±20% Capacitance: 1uF Rated voltage: 6.3V Temperature drift coefficient (dielectric material): X5R Material: X5R | download |
| 0201CG2R2B500NT | GuangDong FengHua Advanced Technology Holoing Co.Ltd. | Accuracy: ±0.1pF Capacitance: 2.2pF Rated voltage: 50V Temperature drift coefficient (dielectric material): C0G Material: C0G | download |
| 0402X225K100NT | GuangDong FengHua Advanced Technology Holoing Co.Ltd. | Accuracy: ±10% Capacitance: 2.2uF Rated voltage: 10V Temperature drift coefficient (dielectric material): X5R | download |
| 1206CG120J500NT | GuangDong FengHua Advanced Technology Holoing Co.Ltd. | Accuracy: ±5% Capacitance: 12pF Rated voltage: 50V Temperature drift coefficient (dielectric material): C0G Material: C0G | download |
| 0402CG1R5C500NT | GuangDong FengHua Advanced Technology Holoing Co.Ltd. | Accuracy: ±0.25pF Capacitance: 1.5pF Rated voltage: 50V Temperature drift coefficient (dielectric material): C0G Material: C0G | download |
| 0603CG6R2C500NT | GuangDong FengHua Advanced Technology Holoing Co.Ltd. | Accuracy: ±0.25pF Capacitance: 6.2pF Rated voltage: 50V Temperature drift coefficient (dielectric material): C0G Material: C0G | download |
| 0402X225M6R3NT | GuangDong FengHua Advanced Technology Holoing Co.Ltd. | Accuracy: ±20% Capacitance: 2.2uF Rated voltage: 6.3V Temperature drift coefficient (dielectric material): X5R Material: X5R | download |
| 1206B501K500NT | GuangDong FengHua Advanced Technology Holoing Co.Ltd. | Accuracy: ±10% Capacitance: 500pF Rated voltage: 50V Temperature drift coefficient (dielectric material): X7R Material: X7R | download |
| 0805CG500J500NT | GuangDong FengHua Advanced Technology Holoing Co.Ltd. | Accuracy: ±5% Capacitance: 50pF Rated voltage: 50V Temperature drift coefficient (dielectric material): C0G Material: C0G | download |
| 1206CG101J500NT | GuangDong FengHua Advanced Technology Holoing Co.Ltd. | Accuracy: ±5% Capacitance: 100pF Rated voltage: 50V Temperature drift coefficient (dielectric material): C0G Material: C0G | download |
| VJ0603G105KXJCW1BC | Vishay | Accuracy: ±10% Capacitance: 1uF Rated voltage: 16V Temperature drift coefficient (dielectric material): X5R X5R | download |
| VJ0603Y104JXACW1BC | Vishay | Accuracy: ±5% Capacitance: 100nF Rated voltage: 50V Temperature drift coefficient (dielectric material): X7R Material: X7R | download |
| VJ0603Y104JXXCW1BC | Vishay | Accuracy: ±5% Capacitance: 100nF Rated voltage: 25V Temperature drift coefficient (dielectric material): X7R Material: X7R | download |
| CL03A105MQ3CSNH | SAMSUNG | Accuracy: ±20% Capacitance: 1uF Rated voltage: 6.3V Temperature drift coefficient (dielectric material): X5R Material: X5R | download |
| CL10B104KB8WPNC | SAMSUNG | Accuracy: ±10% Capacitance: 100nF Rated voltage: 50V Temperature drift coefficient (dielectric material): X7R | download |
| CL05C120JB5NNNC | SAMSUNG | Accuracy: ±5% Capacitance: 12pF Rated voltage: 50V Temperature drift coefficient (dielectric material): C0G Material: C0G | download |
| CL10B334KO8NNNC | SAMSUNG | Capacitor, Ceramic, Chip, General Purpose, 0.33uF, 16V, ±10%, X7R, 0603 (1608 mm), 0.031"T, -55º ~ +125ºC, 7" Reel | download |
| CL03A104KO3NNNC | SAMSUNG | Accuracy: ±10% Capacitance: 100nF Rated voltage: 16V Temperature drift coefficient (dielectric material): X5R | download |
| CL05B563KO5NNNC | SAMSUNG | Accuracy: ±10% Capacitance: 56nF Rated voltage: 16V Temperature drift coefficient (dielectric material): X7R Material: X7R | download |
| CL10C560JB8NNNC | SAMSUNG | Accuracy: ±5% Capacitance: 56pF Rated voltage: 50V Temperature drift coefficient (dielectric material): C0G Material: C0G | download |
| CL03B221KO3NNNC | SAMSUNG | Accuracy: ±10% Capacitance: 220pF Rated voltage: 16V Temperature drift coefficient (dielectric material): X7R | download |