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GMZJ13C

Description
Zener Diode, 13.33V V(Z), 2.51%, 0.5W, Silicon, Unidirectional, ROHS COMPLIANT, GLASS, MICROMELF-2
CategoryDiscrete semiconductor    diode   
File Size94KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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GMZJ13C Overview

Zener Diode, 13.33V V(Z), 2.51%, 0.5W, Silicon, Unidirectional, ROHS COMPLIANT, GLASS, MICROMELF-2

GMZJ13C Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
Parts packaging codeMELF
package instructionO-LELF-R2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance35 Ω
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage13.33 V
surface mountYES
technologyZENER
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance2.51%
Working test current5 mA
Base Number Matches1

GMZJ13C Preview

Download Datasheet
DATA SHEET
GMZJ2.0~GMZJ56
SURFACE MOUNT ZENER DIODES
VOLTAGE
2.0 to 56 Volts
POWER
500 mWatts
MICRO-MELF
Unit : inch (mm)
FEATURES
• Planar Die construction
• 500mW Power Dissipation
• Ideally Suited for Automated Assembly Processes
.049(1.25)
.047(1.2)DIA.
MECHANICAL DATA
• Case: Molded Glass MICRO-MELF
• Terminals: Solderable per MIL-STD-202, Method 208
• Polarity: See Diagram Below
• Approx. Weight: 0.008 grams
• Mounting Position: Any
• Packing information
T/R - 2.5K per 7" plastic Reel
.079(2.0)
.071(1.8)
.043(1.1)
.008(0.2)
.008(0.2)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Parameter
Power Dissipation at Tamb = 25
Junction Temperature
Storage Temperature Range
O
Symbol
Value
500
175
-65 to +175
Units
mW
O
C
P
TOT
T
J
T
S
C
C
O
Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.
Parameter
Thermal Resi stance Juncti on to Ambi ent Ai r
Forward Voltage at IF = 100mA
Symbol
Mi n.
--
--
Typ.
Max.
0.3
1
Uni ts
K/mW
V
RthA
VF
--
--
Vali d provi ded that leads at a di stance of 10mm from case are kept at ambi ent temperature.
STAD-JUL.19.2003
PAGE . 1
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