3VD499500YL
3VD499500YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
Ø
3VD499500YL is a High voltage N-Channel enhancement
mode power MOS-FET chip fabricated in advanced silicon
epitaxial planar technology;
Ø
Advanced termination scheme to provide enhanced voltage-
blocking capability;
Ø
Avalanche Energy Specified;
Ø
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode;
Ø
The chips may packaged in TO-220 type and the typical
equivalent product is 13N50;
CHIP TOPOGRAPHY
Ø
The packaged product is widely used in AC-DC power
suppliers, DC-DC converters and H-bridge PWM motor
drivers;
CHIP INFORMATION
Project
Wafer Size
Die Size
Gross Die
Wafer Thickness
Top Metal /Thickness
Back Metal /Thickness
Gate PAD Size(PAD1)
Scribe Line Width
Description
6Inch
5.66mm *4.40mm
595 die/wafer
300±20µm
AL: 3µm
Ag: 0.8µm
425µm *573µm
80µm *80µm
ABSOLUTE MAXIMUM RATINGS
(Tamb=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (TO-220 Package)
Operation Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
P
D
T
J
Tstg
Ratings
500
±30
12
180
150
-55½+150
Unit
V
V
A
W
°C
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2010.01.27
Page 1 of 2
3VD499500YL
ELECTRICAL CHARACTERISTICS
(Tamb=25°C)
Parameter
Drain -Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source Leakage Current
Static Drain- Source On State
Resistance
Gate-Source Leakage Current
Source-Drain Diode Forward on
Voltage
Symbol
B
VDSS
V
TH
I
DSS
R
DS(on)
I
GSS
V
FSD
Test conditions
V
GS
=0V, I
D
=250µA
V
GS
= V
DS
, I
D
=250µA
V
DS
=500V, V
GS
=0V
V
GS
=10V, I
D
=6.0A
V
GS
=±30V, V
DS
=0V
I
S
=12A, V
GS
=0V
Min.
500
2.0
-
-
-
-
Typ.
-
-
-
-
-
-
Max.
-
4.0
1.0
0.52
±100
1.4
Unit
V
V
µA
Ω
nA
V
Disclaimer:
•
Silan reserves the right to make changes to the information herein for the improvement of the design and performance
without further notice! Customers should obtain the latest relevant information before placing orders and should verify that
such information is complete and current.
•
All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in
system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards
strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause
loss of body injury or damage to property.
•
Silan will supply the best possible product for customers!
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2010.01.27
Page 2 of 2
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