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15KP110A

Description
15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size54KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

15KP110A Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Codecompli
ECCN codeEAR99

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DATA SHEET
15KP SERIES
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
P-600
15000 Watts
POWER
VOLTAGE
17 to 220 Volts
FEATURES
• Plastic package has Underwriters Laboratory Flammability Classification 94V-O
• Glass passivated chip junction in P-600 package
• 15000W Peak Pulse Power capability on 10/1000µs waveform
• Excellent clamping capability
• Low incremental surge resistance
• Both normal and Pb free product are available :
.360(9.1)
.340(8.6)
1.0(25.4)MIN.
Unit: inch(mm)
.052(1.3)
.048(1.2)
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
1.0(25.4)MIN.
MECHANICALDATA
Case: JEDEC P-600 Molded plastic
Terminals: Axial leads, solderable per MIL-STD-750, Method 2026
Polarity: Color band denotes positive end (cathode )
Mounting Position: Any
Weight: 0.07 ounce, 2.1 gram
.360(9.1)
.340(8.6)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Rating at 25°Cambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
For Capacitive load derate current by 20%.
Rati ng
Peak Pulse Power D i ssi pati on on 10/1000s waveform ( Note 1)
Peak Pulse C urrent on 10/1000s waveform ( Note 1)
Steady State Power D i ssi pati on at T
L
=50
O
C Lead Lengths .375",(9.5mm) (Note 2)
Peak Forward Surge C urrent, 8.3ms Si ngle Half Si ne-Wave Superi mposed
on Rated Load(JEC ED Method) (Note 3)
Operati ng Juncti on and Storage Temperature Range
Symbol
P
PPM
I
PPM
P
M(AV)
I
FSM
T
J
,T
STG
Value
15000
SEE TABLE 1
10
400
-55 to +175
Uni ts
Watts
Amps
Amps
Amps
O
C
NOTES:
1.Non-repetitive current pulse, per Fig. 3 and derated above T
A
=25°Cper Fig.
2.Mounted on Copper Leaf area of 0.79 in
2
(20mm
2
).
3.8.3ms single half sine-wave, duty cycle= 4 pulses per minutes maximum.
STAD-JUN.23.2004
PAGE . 1
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