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US1M

Description
1 A, 1000 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size43KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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US1M Overview

1 A, 1000 V, SILICON, SIGNAL DIODE

1 A, 1000 V, 硅, 信号二极管

US1M Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
Parts packaging codeDO-214AC
package instructionR-PDSO-C2
Contacts2
Reach Compliance Code_compli
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time0.1 µs
surface mountYES
Terminal surfaceTin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

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DATA SHEET
US1A~US1M
SURFACE MOUNT ULTRAFAST RECTIFIER
VOLTAGE
50 to 1000 Volts
CURRENT
1.0 Amperes
FEATURES
For surface mounted applications
Low profile package
Built-in strain relief
Easy pick and place
Ultrafast recovery times for high efficiency
Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• Glass passivated junction
• Pb free product are available : 99% Sn above can meet RoHS
environment substance directive reuest
.114(2.90)
.098(2.50)
.062(1.60)
.055(1.40)
SMA/DO-214AC
Unit: inch (mm)
.181(4.60)
.157(4.00)
.096(2.44)
.012(.305)
.006(.152)
.078(2.00)
MECHANICAL DATA
Case: JEDEC DO-214AC molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,Method 2026
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA-481)
Weight: 0.002 ounce, 0.064 gram
.060(1.52)
.030(0.76)
.008(.203)
.002(.051)
.208(5.28)
.188(4.80)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PAR AME T E R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt . 3 7 5 " ( 9 . 5 m m )
l e a d l e ng t h a t T
L
= 1 0 0
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 1 . 0 A
M a xi m um D C R e ve r s e C ur r e nt a t T
A
= 2 5
O
C
R a t e d D C B l o c k i ng Vo l t a g e T
A
= 1 2 5
O
C
Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 2 )
Ty p i c a l T h e r m a l R e s i s t a n c e ( N o t e 3 )
M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 1 )
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B OL
V
RRM
V
RMS
V
DC
I
AV
I
F S M
V
F
1 .0
US 1 A
50
35
50
US 1 B
100
70
100
US 1 D
200
140
200
US 1 G
400
280
400
1 .0
30
1 .4
1 0 .0
100
17
30
50
- 5 0 TO + 1 5 0
100
O
US 1 J
600
420
600
US 1 K
800
560
800
US 1 M
1000
700
1000
U N IT S
V
V
V
A
A
1 .7
V
I
R
uA
C
J
Rθ J L
T
RR
T
J
, T
S TG
pF
C / W
ns
O
C
NOTES:1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
2. Measured at 1 MHz and applied V
r
= 4.0 volts.
3. 8.0 mm
2
( .013mm thick ) land areas.
STAD-JUL.20.2005
PAGE . 1
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