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CJ2324

Description
Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 2A Gate-source threshold voltage: 2.8V @ 250uA Drain-source on-resistance: 234mΩ @ 1.5A, 10V Maximum power dissipation ( Ta=25°C): - Type: N channel N channel, 100V, 2A, 234mΩ@10V; has a larger rated current than BSS123
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size1MB,5 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

Download Datasheet Parametric View All

CJ2324 Overview

Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 2A Gate-source threshold voltage: 2.8V @ 250uA Drain-source on-resistance: 234mΩ @ 1.5A, 10V Maximum power dissipation ( Ta=25°C): - Type: N channel N channel, 100V, 2A, 234mΩ@10V; has a larger rated current than BSS123

CJ2324 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)100V
Continuous drain current (Id) at 25°C2A
Gate-source threshold voltage2.8V @ 250uA
Drain-source on-resistance234mΩ @ 1.5A,10V
Maximum power dissipation (Ta=25°C)-
typeN channel

CJ2324 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate
MOSFETs
CJ2324
V
(BR)DSS
100
V
N-Channel MOSFET
R
DS(on)
MAX
 
234mΩ
@10V
 
267mΩ
@
6V 
278mΩ
@
4.5V 
 
2A
1. GATE
2. SOURCE
3. DRAIN
I
D
SOT-23
FEATURE
TrenchFET Power MOSFET
Low R
DS(ON)
Surface Mount Package
APPLICATION
DC/DC Converters
Load Switch
LED Backlighting in LCD TVs
MARKING
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating:Pluse width limited by junction temperature.
Symbol
V
DS
V
GS
I
D
I
DM
*
R
θJA
T
J
T
STG
T
L
Value
100
±20
2
8
357
150
-55~+150
260
Unit
V
V
A
A
℃/W
www.cj-elec.com
1
A-3,Apr,2015
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