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CJ78L05-G

Description
Output type: fixed Maximum input voltage: 30V Output current: 100mA Output voltage (minimum/fixed value): 5V
CategoryPower/power management    Linear regulator chip   
File Size4MB,4 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

Download Datasheet Parametric View All

CJ78L05-G Overview

Output type: fixed Maximum input voltage: 30V Output current: 100mA Output voltage (minimum/fixed value): 5V

CJ78L05-G Parametric

Parameter NameAttribute value
Output typefixed
Maximum input voltage30V
Output current100mA
Output configurationjust
Number of voltage regulators1
Output voltage (maximum)-
PSRR/ripple suppression49dB(120Hz)
Output voltage (minimum/fixed value)5V
Pressure drop (maximum)1.7V @ 40mA(typ)
Operating power current (maximum)-
Operating temperature-40°C ~ 125°C(TJ)

CJ78L05-G Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L
Encapsulate Voltage Regulators
CJ78L05
Three-terminal positive voltage regulator
FEATURES
Maximum
output
current
I
OM
: 0.1A
Output voltage
V
O
: 5V
Continuous total dissipation
P
D
: 0.6 W
(T
a
= 25
)
1. OUT
2. GND
3. IN
SOT-89-3L
ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified)
Parameter
Input Voltage
Thermal
Resistance from Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
i
R
θJA
T
OPR
T
STG
Value
30
160
-40~+125
-65
~+150
Min
4.80
25℃
Output voltage
Vo
7V≤Vi≤20V, Io=1mA~40mA
Io=1mA~70mA
Load Regulation
Line regulation
Quiescent Current
Quiescent Current Change
Output Noise Voltage
Ripple Rejection
Dropout Voltage
*
Pulse test.
TYPICAL APPLICATION
ΔVo
ΔVo
Iq
ΔIq
ΔIq
V
N
RR
Vd
Vi
3
CJ78L05
Ci
0.33μF
2
C0
0.1μF
1
8V≤Vi≤20V
1mA≤V
l
≤40mA
10Hz≤f≤100KHz
8V≤Vi≤20V,f=120Hz
Io=1mA~100mA
Io=1mA~40mA
7V≤Vi
l
≤20V
8V≤Vi≤20V
0-125℃
25℃
25℃
0-125℃
25℃
25℃
0-125℃
0-125℃
25℃
0-125
25℃
Vo
42
41
49
1.7
4.85
4.90
4.75
4.75
Typ
5.0
5.0
5.0
5.0
5.0
15
8
32
26
3.8
Unit
V
℃/W
Max
5.20
5.15
5.10
5.25
5.25
60
30
150
100
6
1.5
0.1
μV/Vo
dB
V
Unit
V
V
V
V
V
mV
mV
mV
mV
mA
mA
ELECTRICAL CHARACTERISTICS AT SPECIFIED VIRTUAL JUNCTION TEMPERATURE (Vi=10V,Io=40mA,Ci=0.33uF,,Co=0.1uF, unless otherwise specified )
Parameter
Symbol
Test conditions
Note: Bypass capacitors are recommended for optimum stability and transient response and should be located as close as
Possible to the regulators.
www.cj-elec.com
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