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ES3G-C

Description
Reverse recovery time (trr): 35ns DC reverse withstand voltage (Vr): 400V Average rectified current (Io): 3A Forward voltage drop (Vf): 1.25V @ 3A
CategoryDiscrete semiconductor    Super fast recovery diode   
File Size157KB,3 Pages
ManufacturerFORMOSAMS
Websitehttp://www.formosagr.com/
FMS is a leading global manufacturer and supplier with the advantages of upstream and downstream semiconductor integration and proprietary core technologies. It is mainly engaged in the research and development and production of discrete devices such as TVS, Schottky diodes, fast recovery diodes, bridge diodes, and MOS power semiconductors. With its insight into market trends, FMS continues to launch thin packages that meet market demand. At the same time, in order to layout product market segments and the company's marketing strategy planning, MOS products launched the Anbon Semi brand, which is also owned by Shenzhen Meiliwei Semiconductor.
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ES3G-C Overview

Reverse recovery time (trr): 35ns DC reverse withstand voltage (Vr): 400V Average rectified current (Io): 3A Forward voltage drop (Vf): 1.25V @ 3A

ES3G-C Parametric

Parameter NameAttribute value
Reverse recovery time (trr)35ns
DC reverse withstand voltage (Vr)400V
Average rectified current (Io)3A
Forward voltage drop (Vf)1.25V @ 3A

ES3G-C Preview

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