BZT52B3V6 datasheet, PDF - EEWORLD Datasheet

BZT52B3V6: DescriptionAccuracy: - Regulated voltage value (typical value): 3.6V Reverse leakage current: 5uA @ 1V Maximum power: 350mW 3.6V, 0.35W; CategoryDiscrete semiconductor Zener diode; File Size755KB，4 Pages; ManufacturerFORMOSAMS; Websitehttp://www.formosagr.com/; FMS is a leading global manufacturer and supplier with the advantages of upstream and downstream semiconductor integration and proprietary core technologies. It is mainly engaged in the research and development and production of discrete devices such as TVS, Schottky diodes, fast recovery diodes, bridge diodes, and MOS power semiconductors. With its insight into market trends, FMS continues to launch thin packages that meet market demand. At the same time, in order to layout product market segments and the company's marketing strategy planning, MOS products launched the Anbon Semi brand, which is also owned by Shenzhen Meiliwei Semiconductor.

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Accuracy: - Regulated voltage value (typical value): 3.6V Reverse leakage current: 5uA @ 1V Maximum power: 350mW 3.6V, 0.35W

Parameter Name	Attribute value
Accuracy	-
Stable voltage value (typical value)	3.6V
Reverse leakage current	5uA @ 1V
Maximum power	350mW

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