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18N10W

Description
Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 18A (Tc) Gate-source threshold voltage: 2.9V @ 250uA Drain-source on-resistance: 50mΩ @ 5A, 10V Maximum power consumption Dispersion (Ta=25°C): 47W(Tc) Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size1MB,5 Pages
ManufacturerGoford Semiconductor
Websitehttp://www.goford.cn/
Shenzhen Gufeng Electronics Co., Ltd. GOFORD SEMICONDUCTOR was established in Hong Kong in 1995. Now it has established branches, offices and agency networks all over the world. National high-tech enterprises. GOFORD focuses on the research and development, production and sales of semiconductor power components MOSFET field effect tubes. The company provides high-reliability products through strict quality management system and assessment; continuous technological research and development innovation to meet the needs of market segments and product cost-effectiveness; with a global layout vision, it continues to promote the popularity of the GOFORD brand in the field of power devices. GOFORD is committed to creating a world-renowned power device brand!
Download Datasheet Parametric View All

18N10W Overview

Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 18A (Tc) Gate-source threshold voltage: 2.9V @ 250uA Drain-source on-resistance: 50mΩ @ 5A, 10V Maximum power consumption Dispersion (Ta=25°C): 47W(Tc) Type: N-channel

18N10W Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)100V
Continuous drain current (Id) at 25°C18A(Tc)
Gate-source threshold voltage2.9V @ 250uA
Drain-source on-resistance50mΩ @ 5A,10V
Maximum power dissipation (Ta=25°C)47W(Tc)
typeN channel

18N10W Preview

Download Datasheet
GOFORD
18N10W
General Description
The 18N10w combines advanced trench
MOSFET technology with a low resistance package to
provide extremely low R
DS(ON)
. This device is ideal for
power switching application.
Features
VDSS
100V
RDS(ON) RDS(ON)
@10V (typ) @4.5V (typ)
33
m
Ω
37
m
Ω
ID
18A
Schematic Diagram
Application
Power switching application
LED
backlighting
To-252
Table 1.
Absolute Maximum Ratings (TA=25℃)
Parameter
Drain-Source Voltage (
V
GS=
0V)
Gate-Source Voltage (
V
DS=
0V)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed
Maximum Power Dissipation(Tc=25℃)
(Note 1)
Symbol
V
DS
V
GS
I
D (DC)
I
D (DC)
I
DM (pluse)
P
D
E
AS
Value
100
±20
18
12.6
72
47
20
-55 To 175
Unit
V
V
A
A
A
W
Single Pulse Avalanche Energy
(Note 2)
mJ
T
J
,T
STG
Operating Junction and Storage Temperature Range
Notes 1.
Repetitive Rating: Pulse width limited by maximum junction temperature
2.
E
AS
condition:T
J
=25℃,V
DD
=50V,V
G
=10V, R
G
=25Ω
HTTP://www.gofordsemi.com
TEL:0755-29961262
FAX:0755-29961466
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