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BAT54S

Description
DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 800mV @ 100mA
CategoryDiscrete semiconductor    Schottky diode   
File Size2MB,4 Pages
ManufacturerShenzhen Heketai Electronics Co., Ltd.
Websitehttp://www.heketai.com
Founded in 1992, Hekotech is a high-tech innovative enterprise specializing in the R&D, design, packaging, testing, production and sales of semiconductor analog chips and discrete devices. The product line includes lithium battery protection IC, charging management IC, LDO, MOSFET, diode, TVS, bridge stack, triode and other discrete devices and integrated circuits, providing customers with application solutions and on-site technical support services. The company has ISO9001, ISO14001, IATF16949 quality system certification. The products include semiconductors and passive components, which are widely used in power supply, lighting, medical electronics, small appliances, communications, security, instruments, industrial control, automotive electronics and other fields.
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BAT54S Overview

DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 800mV @ 100mA

BAT54S Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)30V
Average rectified current (Io)200mA
Forward voltage drop (Vf)800mV @ 100mA

BAT54S Preview

Download Datasheet
HDX54ST2
SCHOTTKY BARRIER DIODE
FEATURES
Low Forward Voltage
Fast Switching
Surface Mount device
For General Purpose Switching Applications
SOT-23
MECHANICAL DATA
GENERAL :BAT54S
Case: SOT-23
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Weight: 0.013 grams (approximate)
BAT54S:KL4
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Parameter
Reverse Voltage
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
Forward Continuous Current
Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Symbol
V
R
V
RRM
V
RWM
I
F
P
D
R
θJA
T
J
T
STG
Value
30
200
200
500
125
-55 ~+150
Unit
V
mA
mW
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter
Symbol
V
(BR)
Reverse breakdown voltage
Reverse voltage leakage current
I
R
V
F1
V
F2
Forward voltage
V
F3
V
F4
V
F5
C
D
Diode capacitance
T
rr
Reverse recovery time
Min
30
Max
2
0.24
0.32
0.40
0.50
1
10
5
Unit
V
uA
V
V
V
V
V
pF
nS
I
R
=100uA
V
R
=25V
I
F1
=0.1 mA
I
F2
=1 mA
I
F3
=10mA
I
F4
=30 mA
I
F5
=100 mA
V
R
=1V,f=1MHz
I
F
=I
R
=10mA I
rr
=0.1×I
R
R
L
=100Ω
Conditions
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
E-mail:hkt@heketai.com
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