KIA2300 datasheet, PDF - EEWORLD Datasheet

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KIA2300: DescriptionDrain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 6A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 30mΩ @ 6A, 10V Maximum power dissipation (Ta= 25°C): 1.25W Type: N-channel N-channel, 20V, 6A, 40mΩ@4.5V, functions and pins are the same as SI2300; CategoryDiscrete semiconductor MOS (field effect tube); File Size307KB，5 Pages; ManufacturerKia Semiconductor Technology (shenzhen) Co., Ltd.; Websitehttp://www.kiaic.com/page/qiyejianjie.htm; Shenzhen Keyiya Semiconductor Technology Co., Ltd. is a national high-tech enterprise specializing in the development and design of medium and high power field effect transistors, fast recovery diodes, and three-terminal voltage regulators, integrating R&D, production and sales.

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KIA2300 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 6A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 30mΩ @ 6A, 10V Maximum power dissipation (Ta= 25°C): 1.25W Type: N-channel N-channel, 20V, 6A, 40mΩ@4.5V, functions and pins are the same as SI2300

KIA2300 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	20V
Continuous drain current (Id) at 25°C	6A
Gate-source threshold voltage	1V @ 250uA
Drain-source on-resistance	30mΩ @ 6A,10V
Maximum power dissipation (Ta=25°C)	1.25W
type	N channel

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KIA

SEMICONDUCTORS

MOSFET

TRANSISTORS

2300

1. Features



=20V,R

DS(ON)

=30mΩ@ V

=10V,I

=6.0A

=20V,R

DS(ON)

=40mΩ@ V

=4.5V,I

=3.0A

=20V,R

DS(ON)

=55mΩ@ V

=2.5V,I

=2.0A

2. Pin information

Function

Gate

Source

Drain

3. Maximum ratings

(Ta=25°C)

Characteristic

Drain-source voltage

Gate-source voltage

Drain current-continuous*T

=125℃ pulsed

Peak drain current

Power dissipation*

Thermal resistance,junction-ambient

Operating junction and storage temperature range

*Surface Mounted on FR 4 Board,t≤10 sec.

Symbol

thJA

stg

Rating

±10

6.0

1.25

100

-55½150

Unit

°C /W

°C

1 of 5

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