SS32BF THRU SS320BF
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 200 Volts
Forward Current - 3.0 Ampere
SMBF
Cathode Band
Top View
FEATURES
Metal silicon junction,majority carrier conduction
For surface mounted applications
Low power loss,high efficiency
High forward surge current capability
For use in low voltage,high frequency inverters,
free wheeling,and polarity protection applicatlons
0.146(3.70)
0.138(3.50)
0.086(2.20)
0.075(1.90)
0.173(4.4)
0.165(4.2)
0.051(1.30)
0.043(1.10)
0.010(0.26)
0.0071(0.18)
0.051(1.30)
0.039(1.0)
MECHANICAL DATA
Case:
JEDEC SMBF molded plastic body
Terminals:
leads solderable per MIL-STD-750,
Method 2026
Mounting Position:
Any
Weight:57mg/0.002oz
0.216(5.5)
0.200(5.1)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
SYMBOLS
SS32BF SS34BF
SS36BF SS38BF
S36B
S38B
SS310BF
S310B
SS315BF SS320BF
S315B
S320B
UNITS
S32B
S34B
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
40
28
40
60
42
60
80
56
80
3.0
100
70
100
150
105
150
200
140
200
VOLTS
VOLTS
VOLTS
Amp
I
FSM
V
F
I
R
C
J
R
θ
JA
T
J
,
T
STG
0.55
80.0
0.70
0.85
70.0
0.95
0.3
3.0
400
50.0
-50 to +125
-50 to +150
Amps
Volts
mA
pF
C/W
C
C
0.5
5.0
450
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
RATINGS AND CHARACTERISTIC CURVES SS32BF THRU SS320BF
Fig.1 Forward Current Derating Curve
Instaneous Reverse Current (
μA)
3.5
3.0
2.4
1.8
1.2
0.6
0.0
25
50
75
100
125
150
Single phase half wave resistive
or inductive P.C.B mounted on
0.5×0.5"(12.7
×12.7mm
) pad areas
Fig.2 Typical Reverse Characteristics
10
4
T
J
=100
°C
Average Forward Current (A)
10
3
T
J
=75
°C
10
2
SS32BF/SS36BF
10
1
T
J
=25
°C
SS38BF-SS320BF
10
0
0
20
40
60
80
100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage（%）
Fig.3 Typical Forward Characteristic
Instaneous Forward Current (A)
Fig.4 Typical Junction Capacitance
20
10
T
J
=25
°C
Junction Capacitance ( pF)
1000
500
200
100
1.0
SS32BF/SS34BF
SS36BF/SS38BF
SS310BF
SS315BF/SS320BF
20
10
0.1
1
10
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
SS32BF~SS36BF
SS38BF~SS320BF
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
90
80
70
60
50
40
30
20
1
10
8.3 ms Single Half Sine Wave
(JEDEC Method)
Transient Thermal Impedance（
°C
/W）
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
SS32BF-SS38BF
SS310BF-SS320BF
Fig.6- Typical Transient Thermal Impedance
100
10
100
1
0.01
0.1
1
10
100
Number of Cycles at 60Hz
t, Pulse Duration（sec）
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
Wireless Connectivity
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