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11N65TFS

Description
Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 11A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 360mΩ @ 5.5A, 10V Maximum power consumption Dispersion (Ta=25°C): 30W(Tc) Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size502KB,7 Pages
ManufacturerChongqing Pingwei Enterprise co.,Ltd.
Websitehttp://www.perfectway.cn
Chongqing Pingwei Industrial Co., Ltd. is a power semiconductor IDM product company integrating chip design, packaging and testing, application and reliability testing services. The company takes power semiconductor devices as its industrial foundation, and has established product development, manufacturing and testing platforms for smart terminals, industrial control, Internet of Things, new energy vehicles, 5G communications, home appliances, satellite Internet, security electronics, green lighting and other market fields, providing high-reliability medium, low voltage and high voltage power devices, modules and other products and system solutions, always putting user needs first. Specializing in the production of various types of semiconductor devices (rectifier diodes, fast recovery diodes, TVS, Zener diodes, Schottky, rectifier bridges, MOSFET, IGBT, synchronous rectifier devices, SIC and GaN devices, etc.).
Download Datasheet Parametric View All

11N65TFS Overview

Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 11A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 360mΩ @ 5.5A, 10V Maximum power consumption Dispersion (Ta=25°C): 30W(Tc) Type: N-channel

11N65TFS Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)650V
Continuous drain current (Id) at 25°C11A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance360mΩ @ 5.5A,10V
Maximum power dissipation (Ta=25°C)30W(Tc)
typeN channel

11N65TFS Preview

Download Datasheet
11N65TFS
11N65TFS
11 Amps,650 Volts N-Channel Super Junction Power MOSFET
FEATURE
11A,650V,R
DS(ON)MAX
=0.36Ω@V
GS
=10V/5.5A
Low gate charge
Low C
iss
Fast switching
100% avalanche tested
TO-220TF
Absolute Maximum Ratings
(T
C
=25℃,unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current(Note1)
Repetitive Avalanche Energy (Note1)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
Mounting Torque
6-32 or M3 screw
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
T
J
,T
STG
T
L
11N65TFS
650
±30
11
44
120
5.0
0.5
15
-55 to +150
260
10
1.1
UNIT
V
A
mJ
A
mJ
V/ns
lbf·in
N·m
Thermal
Parameter
Characteristics
Symbol
R
thJC
T
C
=25℃
P
D
11N65TFS
4.15
30
Units
℃/W
W
Maximum Junction-to-Case
Maximum Power Dissipation
1
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