PTP08N06N datasheet, PDF - EEWORLD Datasheet

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PTP08N06N: DescriptionDrain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 110A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 8mΩ @ 24A, 10V Maximum power dissipation (Ta=25°C): 156W(Tc) Type: N channel N channel, 60V; CategoryDiscrete semiconductor MOS (field effect tube); File Size536KB，7 Pages; ManufacturerPerfect Intelligent Power Semiconductor Co.,Ltd.; Websitehttp://www.pipsemi.com/; PIP-Semi is a high-tech company founded in Colorado, USA. The company's R&D team comes from Fairchild, IR, and TFSS. Since its establishment in 2003, it has been focusing on the design and development of advanced semiconductor power devices and integrated circuits, chip processing, and packaging and testing technology. The company develops and produces advanced semiconductor power devices such as VDMOS, SG MOSFET, Coolmos, IGBT, Gate Driver IC, and related power management integrated circuit products, which are widely used in energy saving, green lighting, smart grid, electric vehicles, industrial control equipment, consumer electronics and other fields. The company adheres to the corporate culture of "integrity, trust, confidence, and faith" to provide customers with perfect, innovative, professional products and a full range of services. Creating value for customers is our eternal purpose.

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PTP08N06N Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 110A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 8mΩ @ 24A, 10V Maximum power dissipation (Ta=25°C): 156W(Tc) Type: N channel N channel, 60V

PTP08N06N Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	60V
Continuous drain current (Id) at 25°C	110A(Tc)
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	8mΩ @ 24A,10V
Maximum power dissipation (Ta=25°C)	156W(Tc)
type	N channel

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PTP08N06N

Applications:

Lead Free Package and Finish

Power Supply

• Adaptor

Converters

DC-DC

• Charger

• SMPS Standby Power

DSS

60V

650V

DS(ON)

(MAX)

DS(ON)

(Typ.)

1.1

7.0 A

110A

Features:

• RoHS Compliant

Lead

Resistance

• Low ON

Free

Low R

Charge

• Low Gate

DS(ON)

to Minimize Conductive Loss

• Peak Current

Charge for Fast Switching Application

Low Gate

vs Pulse Width Curve

• ESD improved Capability

Optimized B

VDSS

Capability

Ordering Information

Part Number

Package

TO-220

Brand

TO-220

Package Not

to Scale

Absolute Maximum Ratings

Symbol

DSS

=25

Parameter

unless otherwise specified

Value

110

439

156

1.04

+/-20

Figure 9

-55 to 175

Unit

Drain-to-Source Voltage

Continuous Drain Current

Pulsed Drain Current @V

=10V

Power Dissipation

Derating Factor above 25

Gate-to-Source Voltage

Single Pulse Avalanche Energy

(L=1mH)

Pulsed Avalanche Energy

and T

STG

Operating Junction and Storage Temperature Range

Thermal Resistance

Symbol

Parameter

Junction-to-Case

Min

Typ Max Unit

Test Conditions

Water cooled heatsink, P

/W adjusted for a peak junction

Temperature of 175

Note:

a: Calculated continuous current based upon maximum allowable junction temperature +175

. Package limitation current is 80A.

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