TVS/ESD Arrays - RLSD32AxxxV Series
Features
• 350 Watts peak pulse power (tp = 8/20μs)
• Transient protection for data lines to
IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 24A (8/20μs)
• Small package for use in portable electronics
• Suitable replacement for MLV’s in ESD protection
applications
• Protects one I/O or power line
• Low clamping voltage
• Solid-state silicon avalanche technology
Mechanical Characteristics
• SOD-323 package
• Molding compound flammability rating: UL 94V-0
• Packaging: Tape and Reel per EIA 481
• Lead Finish: Matte tin
• RoHS Compliant
Pinout and Functional Block Diagram
1
Applications
• Cell Phone Handsets and Accessories
• Microprocessor based equipment
• Personal Digital Assistants (PDA’s)
• Notebooks, Desktops, and Servers
• Portable Instrumentation
• Pagers Peripherals
2
Life Support Note
• Not Intended for Use in Life Support or Life
Saving Applications
• The products shown herein are not designed
for use in life sustaining or life saving
applications unless otherwise expressly indicated
Circuit Protection
System
Specifications are subject to change without notice.
Page:1
TVS/ESD Arrays - RLSD32AxxxV Series
Absolute Maximum Rating
Rating
Peak Pulse Power (tp =8/20μs)
Maximum Peak Pulse Current (tp = 8/20μs)
ESD voltage (HBM contact)
ESD voltage (AIR contact)
Lead Soldering Temperature
Operating Temperature
Storage Temperature
Symbol
Ppk
IPP
VESD
VESD
TL
T
J
TSTG
Value
350
24
±8
±15
260 (10 sec.)
-55 to +125
-55 to +150
Units
Watts
Amps
Kv
Kv
°C
°C
°C
ElectrIcal CharacterlstIcs Per Lin (@ 25°C Unless Otherwise Specified)
Reverse
Stand-Off
Voltage
Vrwm
Max
W
RLSD32A031V
RLSD32A051V
RLSD32A081V
RLSD32A121V
RLSD32A151V
RLSD32A181V
RLSD32A241V
RLSD32A361V
350
350
350
350
350
350
350
350
V
3.3
5
8
12
15
18
24
36
Peak Pulse
Voltage
@8/20μS
Peak Pulse
Current
@8/20μS
Reverse
Leakage
@Vrwm
IR@Vrwm
Max
μA
5
5
1
1
1
1
1
1
Maximum
Capacitance
@1MHZ
Co
Max
pF
450
300
200
130
120
100
80
60
Type Number
Peak Power
Dissipation
@8/20μS
Pppm
Vc@IPP
V
6.5
9.8
14
19
24
29
43
60
IPP
A
1
1
1
1
1
1
1
1
Circuit Protection
System
Specifications are subject to change without notice.
Page:2
TVS/ESD Arrays - RLSD32AxxxV Series
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
10
110
(kW)
Power Derating Curve
100
pk
Peak Pulse Power - P
1
% of Rated Power or I
PP
90
80
70
60
50
40
30
20
10
0.1
0.01
0.1
1
10
Pulse Duration - t
p
0
100
(µs)
1000
0
25
50
75
100
A
125
150
Ambient Temperature - T
( C)
o
Pulse Waveform
110
100
90
80
Percent of I
Clamping Voltage vs. Peak Pulse Current
Waveform
Parameters:
tr = 8µs
td = 20µs
30
25
20
15
10
5
0
0
60
50
40
30
20
10
0
0
5
10
e
-t
Clamping Voltage - V
70
PP
Waveform
Parameters:
tr = 8µs
td = 20µs
RLSD32A12C
C
(V)
RLSD32A5.0C
td = I
PP
/2
15
Time (µs)
20
25
30
5
10
15
20
PP
25
30
Peak Pulse Current - I
(A)
Circuit Protection
System
Specifications are subject to change without notice.
Page:3
MCU
京公网安备 11010802033920号
EEWORLD
