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B772

Description
Rated power: 500mW Collector current Ic: 3A Collector-emitter breakdown voltage Vce: 30V Transistor type: PNP PNP, Vceo=-30V, Ic=-3A, hfe=160~320
CategoryDiscrete semiconductor    triode   
File Size207KB,2 Pages
ManufacturerSHIKUES
Websitehttp://www.shike.tw
Shike, originated from Taiwan, China, is one of the world's leading semiconductor discrete component manufacturers. It mainly provides engineers and designers with various semiconductor products and software, bringing better sensory experience to products such as automobiles, communications, computers, consumer electronics, industry, LED lighting, medical and power applications. Since its establishment, under the guidance of the core concept of "making products have good cores", with safety, low energy consumption and high performance as its purpose, Shike Semiconductor's R&D strategy has never wavered. Nearly a quarter of its employees work in the field of R&D and product design, and annual R&D expenses account for about 22% of total revenue. In addition, with the hard work of young, dream-filled and passionate employees, Shike has developed rapidly, and its products are exported to North America, Europe and the Asia-Pacific region. It is considered one of the most innovative companies in the semiconductor industry. Shike will continue to optimize in terms of safety, energy consumption and performance, and more flexibly meet the needs of design engineers and the ever-changing market. From concept design to production and manufacturing, we will provide full support. Looking to the future, we will focus on innovation and continue to create value for our customers, employees and society as a whole. By reducing energy consumption, improving safety and enhancing performance, we will focus on how to use technological research and development to improve the quality of life of the public. We will go all out to fulfill our commitments.
Download Datasheet Parametric View All

B772 Overview

Rated power: 500mW Collector current Ic: 3A Collector-emitter breakdown voltage Vce: 30V Transistor type: PNP PNP, Vceo=-30V, Ic=-3A, hfe=160~320

B772 Parametric

Parameter NameAttribute value
rated power500mW
Collector current Ic3A
Collector-emitter breakdown voltage Vce30V
Transistor typePNP

B772 Preview

Download Datasheet
SOT-89-3L Plastic-Encapsulate PNP Transistors
Encapsulate
FEATURE
·Low speed switching
MARKING:B772
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
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