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SMBJ22CA

Description
极性:Bidirectional 峰值脉冲电流(10/1000us):16.9A 箝位电压:35.5V 击穿电压(最小值):24.4V 反向关断电压(典型值):22V 600W
CategoryDiscrete semiconductor    TVS diode   
File Size191KB,4 Pages
ManufacturerSINO-IC Microelectronic Co., Ltd.
Websitehttp://www.sino-ic.net
Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.
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SMBJ22CA Overview

极性:Bidirectional 峰值脉冲电流(10/1000us):16.9A 箝位电压:35.5V 击穿电压(最小值):24.4V 反向关断电压(典型值):22V 600W

SMBJ22CA Parametric

Parameter NameAttribute value
polarityBidirectional
Peak pulse current (10/1000us)16.9A
clamping voltage35.5V
Breakdown voltage (minimum value)24.4V
Reverse shutdown voltage (typ)22V

SMBJ22CA Preview

Download Datasheet
SHANGHAI
MICROELECTRONICS CO., LTD.
MARCH 2008
SMBJ Seires
600 W Surface Mount Transient Voltage Suppressors
FGeneral Description
SMBJ Seires from SINO-IC is designed
to protect voltage sensitive components from
high voltage, high energy transients. It has
excellent clamping capability, high surge
capability,
fast
response
time
and
cost-effectiveness.
Revision:B
Features
Peak pulse power: 600 W (10/1000μs)
Breakdown Voltage :5.0V~120V
Bidirectional Type
Low Clamping Factor
Fast Response Time < 1 ns
Glass Passivated Junction
Applications
Communication Systems
Power Supplies
Medical Equipment
Business Machines
Mechanical Data
Case: JESEC DO214AA. Molded plastic over glass
passivated junction
Polarity: Color band denoted positive end
except Bidirectional
(cathode)
Absolute Maximum Ratings @ 25°C Unless Otherwise Specified
Parameter
Symbol
Value
Uni
ts
Peak Power Dissipation (Note 1.) @T
L
= 25°C, Pulse Width = 1 ms
P
PK
I
PPM
600
SEE TABLE 1
100
-55 to 150
-55 to 150
W
A
A
°C
°C
Peak pulse current of on 10/1000μs waveform
Peak forward surge Current
Storage Temperature Range
Operating Junction and Storage Temperature Range
Notes:
1. 10 X 1000 us, non–repetitive
I
PSM
T
STG
T
J
, T
STG
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
3. Mounted on 5.0mm2(0.03mm thick) Copper Rads to each terminal
4. A transient suppressor is normally selected according to the working peak reverse voltage (V
RWM
),
which should be equal to or greater than the DC or continuous peak operating voltage level.
5. VBR measured at pulse test current IT at an ambient temperature of 25°C.
6. Surge current waveform per Figure 1 and derate per Figure 3.
Symbol
I
PP
V
C
V
RWM
I
R
I
T
V
BR
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Test Current
Breakdown Voltage @ I
T
ShangHai Sino-IC Microelectronics Co., Ltd.
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