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TDM3512

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 50A (Tc) Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 3.4mΩ @ 13.5A, 4.5V max Power dissipation (Ta=25°C): 35W(Tc) Type: N-channel N-channel 20V 3.4mΩ@4.5V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size376KB,8 Pages
ManufacturerTechcode Semiconductor, Inc.
Websitehttp://www.techcodesemi.com/cn/index.asp
In the field of high-end analog circuit design and production, American Ted Semiconductor Co., Ltd. has 12 years of comprehensive design experience. We not only have the world's leading analog circuit design technology, but also have a more complete and advanced product quality management method. Due to the production method of "no production line design company", we use a more efficient wafer foundry cooperation model in business operations, so that we can quickly use advanced and more time-effective technology to design high-end analog circuit products with higher cost performance, and then quickly meet customers' needs for high-end products in the growing market demand.
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TDM3512 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 50A (Tc) Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 3.4mΩ @ 13.5A, 4.5V max Power dissipation (Ta=25°C): 35W(Tc) Type: N-channel N-channel 20V 3.4mΩ@4.5V

TDM3512 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)20V
Continuous drain current (Id) at 25°C50A(Tc)
Gate-source threshold voltage1V @ 250uA
Drain-source on-resistance3.4mΩ @ 13.5A,4.5V
Maximum power dissipation (Ta=25°C)35W(Tc)
typeN channel

TDM3512 Preview

Download Datasheet
 
 
 
 
T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM3512
DESCRIPTION 
The  TDM3512  uses  advanced  trench  technology  to 
provide  excellent  RDS(ON)  and  low  gate  charge.  This 
device  is  suitable  for  use  as  a  load  switch  or  in 
 
PWM 
applications. 
GENERAL FEATURES 
RDS(ON) < 7mΩ @ VGS=1.8V 
 
RDS(ON) < 4.5mΩ @ VGS=2.5V 
RDS(ON) < 3.4mΩ @ VGS=4.5V 
High Power and current handling capability 
Surface Mount Package 
Lead Free and Green Devices available(RoHS Compliant) 
 
Application 
PWM applications 
Load switch 
Power management 
Powered Systems 
 
PPAK-3*3-8 
 
ABSOLUTE MAXIMUM RATINGS(T
A
=25℃unless otherwise noted) 
Parameter 
Drain‐Source Voltage 
Gate‐Source Voltage 
Diode Continuous Forward Current 
Drain Current @ Continuous 
Drain Current @ Current‐Pulsed 
(Note 1)
 
Maximum Power Dissipation 
 
Drain Current @ Continuous 
Maximum Power Dissipation 
 
Thermal Resistance,Junction‐to‐Case 
Thermal Resistance,Junction‐to‐Ambient 
(Note 2)
 
Maximum Operating Junction Temperature 
Storage Temperature Range 
 
Symbol 
V
DS
 
V
GS
 
I
S
(T
C
=25℃) 
I
D
(T
C
=25℃) 
I
D
(T
C
=100℃) 
I
DM
(T
C
=25℃) 
P
D
(T
C
=25℃) 
P
D
(T
C
=100℃) 
I
D
(T
A
=25℃) 
I
D
(T
A
=70℃) 
P
D
(T
A
=25℃) 
P
D
(T
A
=70℃) 
R
θJC
 
R
θJA
 
T
J
 
T
STG
 
Limit 
20 
+12 
25 
50 
40 
200 
35 
14 
17.8 
14.2 
1.6 
3.5 
78 
150 
‐55 To 150 
Unit 
℃/W 
℃/W 
℃ 
℃ 
July  15,  2015 
                                                           
Techcode  Semiconductor  Limited 
                                               
www.techcodesemi.com 
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