VBM15R13 datasheet, PDF - EEWORLD Datasheet

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VBM15R13: DescriptionDrain-source voltage (Vdss): 500V Continuous drain current (Id) (at 25°C): 13A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: - Maximum power dissipation (Ta=25°C) :250W Type: N channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size669KB，9 Pages; ManufacturerVBsemi Electronics Co. Ltd.; Websitehttp://www.vbsemi.tw/; Founded in 2000, VBsemi is the most competitive power semiconductor component manufacturer of MOSFET in Taiwan. The company has obtained many product invention patents and has been certified by ISO14001, QS9000, and ISO9001. VBsemi is a Taiwanese company that independently develops, produces, and sells MOSFET under its own brand. From component design, wafer processing, packaging, characteristic analysis, testing, and customer service, it is marketed worldwide. The company's products have been widely used in UPS, Power Inverter, CCFL, DC Fan, SMPS, Adapter, Lighting, Battery, DC-DC, LCD Monitor and other fields.

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VBM15R13 Overview

Drain-source voltage (Vdss): 500V Continuous drain current (Id) (at 25°C): 13A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: - Maximum power dissipation (Ta=25°C) :250W Type: N channel

VBM15R13 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	500V
Continuous drain current (Id) at 25°C	13A
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	-
Maximum power dissipation (Ta=25°C)	250W
type	N channel

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VBM15R13

www.VBsemi.com

PRODUCT SUMMARY

(V)

DS(on)

()

(Max.) (nC)

(nC)

Configuration

= 10 V

Single

500

0.660

Power MOSFET

FEATURES

• Lower Gate Charge Q

Results in Simpler Drive

Reqirements

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

• Compliant to RoHS Directive 2002/95/EC

TO-220AB

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Mounting Torque

for 10 s

6-32 or M3 screw

= 25 °C

dV/dt

, T

stg

at 10 V

= 25 °C

= 100 °C

SYMBOL

LIMIT

500

± 20

8.1

2.0

560

250

9.2

- 55 to + 150

300

1.1

W/°C

V/ns

°C

lbf · in

N·m

UNIT

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T

= 25 °C, L = 5.7 mH, R

= 25

,

=14 A, dV/dt = 7.6 V/ns (see fig. 12a).

c. I



14 A, dI/dt



250 A/μs, V



, T



150 °C.

d. 1.6 mm from case.

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