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CS3N40A3H

Description
Drain-source voltage (Vdss): 400V Continuous drain current (Id) (at 25°C): 3A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 3.4Ω @ 1A, 10V Maximum power consumption Dispersed (Ta=25°C): 30W (Tc) Type: N channel N channel, 400V, 3A, 2.8Ω@10V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size190KB,10 Pages
ManufacturerWuxi CR Huajing Microelectronics Co., Ltd.
Websitehttp://www.crhj.com.cn/cn/index.php
Wuxi China Resources Huajing Microelectronics Co., Ltd. is a national key high-tech enterprise responsible for power semiconductor device business under China Resources Microelectronics. It is the vice chairman unit of the Discrete Device Branch of the China Semiconductor Association and produces the domestically renowned "Huajing" brand discrete devices.
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CS3N40A3H Overview

Drain-source voltage (Vdss): 400V Continuous drain current (Id) (at 25°C): 3A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 3.4Ω @ 1A, 10V Maximum power consumption Dispersed (Ta=25°C): 30W (Tc) Type: N channel N channel, 400V, 3A, 2.8Ω@10V

CS3N40A3H Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)400V
Continuous drain current (Id) at 25°C3A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance3.4Ω @ 1A,10V
Maximum power dissipation (Ta=25°C)30W(Tc)
typeN channel

CS3N40A3H Preview

Download Datasheet
Silicon
N-Channel
Power MOSFET
R
CS3N40 A3H
General Description
CS3N40 A3H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-251, which accords with the RoHS standard.
V
DSS
I
D
P
D
(T
C
=25℃)
R
DS(ON)TYP
400
3
30
2.8
V
A
W
Features:
l
Fast Switching
l
Low ON Resistance
(Rdson≤3.4Ω)
l
Low Gate Charge
(Typical Data:5nC)
l
Low Reverse transfer capacitances
(Typical:4.5pF)
l
100% Single Pulse avalanche energy Test
Applications
Power switch circuit of LCD Power and adaptor.
Absolute
(Tc=
25℃ unless otherwise specified)
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
400
3
1.8
12
±30
50
6.4
1.2
5
30
0.24
150,–55 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
V
GS
E
AS
E
AR
I
AR
a2
a1
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
a1
a3
dv/dt
P
D
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
T
J
,T
stg
T
L
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pa g e 1 of 1 0
2 0 1 5 V0 1
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