山东晶导微电子有限公司
Jingdao Microelectronics
FTB15SJ THRU FTB15SM
1.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
FEATURES:
• Glass Passivated Chip Junction
• Reverse Voltage - 600 to 1000 V
• Forward Current - 1.5 A
• Fast reverse recovery time
• Designed for Surface Mount Application
MECHANICAL DATA
• Case: ABS/LBF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 88mg / 0.0031oz
PINNING
PIN
1
2
3
4
DESCRIPTION
Input Pin（~）
Input Pin（~）
Output
Anode（+）
Output
Cathode（-）
3
4
1
2
ABS/LBF Package
Maximum Ratings and Electrical characteristics
Ratings at 25
°C
ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Parameter
Maximum Repetitive Peak Reverse Voltage
Symbols
V
RRM
V
RMS
V
DC
I
F(AV)
FTB15SJ
FTB15SK
FTB15SM
Units
V
V
V
600
420
1000
800
560
1000
1000
700
1000
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
C
= 125
°C
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
1.5
A
I
FSM
50
A
V
Maximum Instantaneous Forward Voltage at 1.5 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
T
A
= 25
°C
T
A
=125
°C
V
F
1.3
5
50
160
30
65
16
-55 ~ +150
I
R
μA
Maximum Reverse Recovery Time（Note1
）
Typical Junction Capacitance
at V
R
=4V, f=1MHz
Typical Thermal Resistance（Note2）
t
rr
C
j
R
θJA
ns
pF
°C/W
°C
Operating and Storage Temperature Range
T
j
, T
stg
Note: 1. Measured at 1 MHz and applied reverse voltage of 4 V D.C
2. Mounted on glass epoxy PC board with 4×1.5"
×
1.5"
（
3.81
×
3.81 cm
）copper
pad.
2016.01
ABS-F-FTB15SJ~FTB15SM-1.5A1KV160ns
Page 1 of 3
山东晶导微电子有限公司
Jingdao Microelectronics
FTB15SJ THRU FTB15SM
Fig.1 Forward Current Derating Curve
1.8
1.5
1.2
0.9
0.6
0.3
0.0
25
50
75
100
125
150
175
Fig.2 Typical Reverse Characteristics
Instaneous Reverse Current（
μ
A）
100
T
J
=125
°C
10
Average Output Current
(A)
1.0
T
J
=25
°C
0.1
00
20
40
60
80
100
120
140
Case Temperature (°C)
percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Instaneous Forward
Characteristics
Instaneous Forward Current (A)
Junction Capacitance ( pF)
10
T
J
=25
°C
100
Fig.4 Typical Junction Capacitance
T
J
=25
°C
1.0
10
0.1
pulse with 300μs
1% duty cycle
0.01
0.0
0.5
1.0
1.5
2.0
2.5
1
0.1
1.0
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
60
50
40
30
20
10
00
1
8.3 ms Single Half Sine Wave
(JEDEC Method)
10
100
Number of Cycles
2016.01
www.sdjingdao.com
Page 2 of 3
Test/Measurement
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