BZT52C3V3S datasheet, PDF - EEWORLD Datasheet

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BZT52C3V3S: DescriptionAccuracy: - Voltage regulation value (typical value): 3.3V Reverse leakage current: 5uA @ 1V Maximum power: 200mW zener, 3.1-3.5V, Izt=5mA, SOD-323; CategoryDiscrete semiconductor Zener diode; File Size413KB，2 Pages; ManufacturerBORN SEMICONDUCTOR（SHENZHEN）CO.,LTD.; Websitehttp://www.born-tw.com/; BORNSEMI (Shenzhen) Co., Ltd. (BORNSEMI) is a semiconductor company with independent R&D, design, production and sales as its main body. It is a high-tech enterprise specializing in wafer design, R&D, production and sales of protection devices and power devices. It is one of the international suppliers that master the core technology of semiconductor overvoltage protection devices and protection integrated circuits. BORN focuses on the development and sales of high-quality, high-performance analog integrated circuits and power devices, and always plans, develops and produces with the goal of world-class electronic technology. The company's products include: protection devices (TVS, ESD, TSS) power devices (MOS, SKY, DIODE, TRANSISTOR), driver ICs, interface chips, etc. BORN has a production base in Tianjin (a joint venture with the Institute of Microelectronics of the Chinese Academy of Sciences) and a production base in Henan (wafer manufacturing and packaging and testing). From wafer design, tape-out to packaging and testing, BORN strives for high reliability of product quality and creates a closed loop of the entire industry chain. In order to form two major system products, power and protection, the quality has reached the international advanced level, especially our company's low-capacitance series of semiconductor protection devices, which have independent intellectual property rights and patent systems. As an industry leader in the field of overcurrent and overvoltage devices, our products are an indispensable component of almost all products that use electrical energy, including: automotive electronic systems, traffic signals, equipment communication terminals, communication equipment, household and industrial electrical appliances, electricity, power supply equipment, and electronic circuit protection at the power input end.

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BZT52C3V3S Overview

Accuracy: - Voltage regulation value (typical value): 3.3V Reverse leakage current: 5uA @ 1V Maximum power: 200mW zener, 3.1-3.5V, Izt=5mA, SOD-323

BZT52C3V3S Parametric

Parameter Name	Attribute value
Accuracy	-
Stable voltage value (typical value)	3.3V
Reverse leakage current	5uA @ 1V
Maximum power	200mW

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BZT52CxxS Series

ZENER

SOD-323

SOD323 Plastic-Encapsulate Zener Diode

ROHS

Features

Low

Zener Impedance



Power Dissipation of 200mW



High Stability and High Reliability

Mechanical Data



SOD-323 Small Outline Plastic Package



Polarity: Color band denotes cathode end



Mounting Position: Any

Maximum Ratings & Thermal Characteristics

(

Ratings at 25℃ ambient temperature unless otherwise specified.)

Parameters

Power Dissipation

Forward Voltage @IF=10mA

Storage temperature range

Symbol

Value

200

0.9

Unit

℃

-65-+150

Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm²

Short duration test pulse used to minimize self-heating effect

f=1KHz

Electrical Characteristics

(

Ratings at 25℃ ambient temperature unless otherwise specified).

Zener Voltage Range

Device

Marking

Nom(V)

BZT52C2V4S

BZT52C2V7S

BZT52C3V0S

BZT52C3V3S

BZT52C3V6S

BZT52C3V9S

BZT52C4V3S

BZT52C4V7S

BZT52C5V1S

BZT52C5V6S

BZT52C6V2S

BZT52C6V8S

BZT52C7V5S

BZT52C8V2S

BZT52C9V1S

BZT52C10S

BZT52C11S

BZT52C12S

BZT52C13S

2.4

2.7

3.0

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.2

6.8

7.5

8.2

9.1

Vz@Izt

Min(V)

2.2

2.5

2.8

3.1

3.4

3.7

4.0

4.4

4.8

5.2

5.8

6.4

7.0

7.7

8.5

9.4

10.4

11.4

12.4

Maximum Zener

Impedance

Zzt

Zzk

Izk

Izt

1.5KExxA(CA)

@Izk

@Izt

Max(V)

2.6

2.9

3.2

3.5

3.8

4.1

4.6

5.0

5.4

6.0

6.6

7.2

7.9

8.7

9.6

10.6

11.6

12.7

14.1

100

600

500

480

400

150

100

150

170

1.0

Maximum

Reverse Current

0.7

0.5

0.2

0.1

1.0

2.0

4.0

5.0

6.0

7.0

8.0

Typical

Temperature

coefficent @

IZTC=mV/℃

Min

-3.5

-2.7

-2.0

0.4

1.2

2.5

3.2

3.8

4.5

5.4

6.0

7.0

Max

0.2

1.2

2.5

3.7

4.5

5.3

6.2

7.0

8.0

9.0

10.0

11.0

Test

Current

IZTC

Rev 8: Nov 2014

www.born-tw.com

Page 1 of 2

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