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FHF2N65D

CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size980KB,12 Pages
ManufacturerFeiHong
Websitehttp://www.gzfeihong.com/
Guangzhou Feihong Semiconductor Co., Ltd. was established in Yuexiu District, Guangzhou, and has been operating with integrity for more than 20 years. It mainly develops, produces and operates semiconductor devices such as field effect transistors and triodes, which are currently widely used in audio, household appliances, LED lighting, computer power supplies, chargers, inverters, battery vehicles, automotive electronics and other industries, providing high-quality supporting services for domestic electrical appliance manufacturers.
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FHF2N65D Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)650V
Continuous drain current (Id) at 25°C2A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance5.5Ω @ 1A,10V
Maximum power dissipation (Ta=25°C)27W(Tc)
typeN channel

FHF2N65D Preview

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N
沟道增强型场效应晶½管
N-CHANNEL MOSFET
FHP2N65D/FHF2N65D/FHU2N65D/FHD2N65D
主要参数 MAIN CHARACTERISTICS
ID
VDSS
Rdson-typ( @Vgs=10V)
Qg-typ
2A
650V
4.0Ω
8.0nC
产品特性 FEATURES
½栅极电荷
½
Crss (典型值 6pF)
开关速度快
100%经过雪崩测试
高抗
dv/dt
½力
RoHS
产品
Low gate charge
Low Crss (typical 6pF )
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product
用途 APPLICATIONS
高频开关电源
电子镇流器
LED
电源
High efficiency switch mode
power supplies
Electronic ballast
LED power supply
等效电路
Equivalent Circuit
封装½式 Package
G D S
TO-251
FHU
系列
GDS
TO-252
FHD
系列
TO-220
FHP
系列
TO-220F
FHF
系列
绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃)
项目
Parameter
最高漏极-源极直流电压
Drain-Source Voltage
连续漏极电流*
Drain Current -continuous *
最大脉冲漏极电流(注
1)
Drain Current – pulse(note 1)
最高栅源电压
Gate-Source Voltage
单脉冲雪崩½量(注
2)
Single Pulsed Avalanche Energy
(note
2)
雪崩电流(注
1)
Avalanche Current(note 1)
重复雪崩½量(注
1)
Repetitive Avalanche Current
(note
1)
二极管反向恢复最大电压变化速率
(注
3)
Peak Diode Recovery dv/dt(note 3)
耗散功率
Power Dissipation
最高结温及存储温度
Operating and Storage Temperature
Range
引线最高焊接温度
Maximum Lead Temperature for
Soldering Purposes
符号
Symbol
V
DS
I
D
(T
C
=25℃)
I
D
(T
C
=100℃)
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
(TC=25℃)
-Derate above 25℃
T
J
,T
STG
35
0.27
数值
Value
FHU2N65D/FHD2N65D
FHP2N65D
650
2
1.2
8
±
30
101
1.1
6.4
5.0
54
0.43
150,–55 to 150
27
0.22
FHF2N65D
单½
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
T
L
300
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
1
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