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FHF8N65A

CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size970KB,10 Pages
ManufacturerFeiHong
Websitehttp://www.gzfeihong.com/
Guangzhou Feihong Semiconductor Co., Ltd. was established in Yuexiu District, Guangzhou, and has been operating with integrity for more than 20 years. It mainly develops, produces and operates semiconductor devices such as field effect transistors and triodes, which are currently widely used in audio, household appliances, LED lighting, computer power supplies, chargers, inverters, battery vehicles, automotive electronics and other industries, providing high-quality supporting services for domestic electrical appliance manufacturers.
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FHF8N65A Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)650V
Continuous drain current (Id) at 25°C8A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance1.3Ω @ 4A,10V
Maximum power dissipation (Ta=25°C)35W(Tc)
typeN channel

FHF8N65A Preview

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N
沟道增强型场效应晶½管
N-CHANNEL MOSFET
FHP8N65A /FHF8N65A
主要参数 MAIN CHARACTERISTICS
ID
VDSS
Rdson-typ( @Vgs=10V)
Qg-typ
8A
650V
1.0Ω
24nC
产品特性 FEATURES
½栅极电荷
½
Crss (典型值 5.5pF)
开关速度快
100%经过雪崩测试
高抗
dv/dt
½力
RoHS
产品
Low gate charge
Low Crss (typical 5.5pF )
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product
用途 APPLICATIONS
高频开关电源
电子镇流器
LED
电源
High efficiency switch mode
power supplies
Electronic ballast
LED power supply
等效电路
Equivalent Circuit
封装½式 Package
TO-220
FHP
系列
TO-220F
FHF
系列
绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃)
数值
Value
FHP8N65A
最高漏极-源极直流电压
Drain-Source Voltage
连续漏极电流*
Drain Current -continuous *
最大脉冲漏极电流(注
1)
Drain Current – pulse(note 1)
最高栅源电压
Gate-Source Voltage
单脉冲雪崩½量(注
2)
Single Pulsed Avalanche Energy note 2)
雪崩电流(注
1)
Avalanche Current(note 1)
重复雪崩½量(注
1)
Repetitive Avalanche Current(note 1)
二极管反向恢复最大电压变化速率
(注
3)
Peak Diode Recovery dv/dt(note 3)
耗散功率
Power Dissipation
最高结温及存储温度
Operating and Storage Temperature
Range
引线最高焊接温度
Maximum Lead Temperature for
Soldering Purposes
V
DS
I
D
(T
C
=25℃)
I
D
(T
C
=100℃)
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
(TC=25℃)
-Derate above 25
T
J
,T
STG
100
0.8
150,–55 to 150
650
8
5
28
±
30
350
1.9
4.4
5.0
35
0.28
FHF8N65A
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
项目
Parameter
符号
Symbol
单½
Unit
T
L
300
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
1
Ver-1.0
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