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GP2302

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 2.1A Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 45mΩ @ 3.6A, 4.5V Maximum power consumption Dispersion (Ta=25°C): 350mW Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size767KB,5 Pages
ManufacturerShanghai Greenpower Electronics Technology Co., Ltd.
Websitehttp://www.sh-greenpower.com/
Shanghai GreenPower Electronics Co., Ltd. (GreenPower) was established in August 2014. It is located in Shanghai Zhangjiang Hi-Tech Park, which is known as the "Silicon Valley of China". With a registered capital of RMB 10 million, it is an enterprise engaged in the design, development and sales of power semiconductor products, integrated circuits, and computer hardware and software. The company's team consists of a group of members who have worked in well-known semiconductor companies at home and abroad for many years and have rich experience in product design and management. The company has established product lines such as Trench-MOSFET, Schottky diodes, TVS, analog ICs, etc., and has a complete set of R&D, production, logistics, sales and service systems. In combination with its own technology and channel advantages, it has established cooperative relationships with domestic leading and internationally renowned wafer foundries and packaging and testing foundries to form a competitive industrial chain. The products independently developed and produced have been widely used in consumer electronics, green lighting, instrumentation and other fields.
Download Datasheet Parametric View All

GP2302 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 2.1A Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 45mΩ @ 3.6A, 4.5V Maximum power consumption Dispersion (Ta=25°C): 350mW Type: N-channel

GP2302 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)20V
Continuous drain current (Id) at 25°C2.1A
Gate-source threshold voltage1.2V @ 250uA
Drain-source on-resistance45mΩ @ 3.6A,4.5V
Maximum power dissipation (Ta=25°C)350mW
typeN channel

GP2302 Preview

Download Datasheet
GP2302
20V N-Channel MOSFET
Product Summary
V
(BR)DSS
20V
R
DS(on)MAX
45mΩ@4.5V
60mΩ@2.5V
I
D
2.1A
SOT-23
Feature
TrenchFET Power MOSFET
Excellent R
DS(on)
and Low Gate Charge
Application
DC/DC Converter
Load Switch for Portable Devices
Battery Switch
MARKING:
Schematic diagram
ABSOLUTE MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Plused Drain Current
Continuous Source-Drain Current(Diode Conduction)
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
R
θJA
T
J
T
STG
Value
20
±
8
2.1
10
0.6
0.35
357
150
-55~ +150
Unit
V
V
A
A
A
W
℃/W
http://www.sh-greenpower.com
Shanghai GreenPower Electronic Co.Ltd.
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