HY1103S
N-Channel Enhancement Mode MOSFET
Feature
30V/11A
R
DS(ON)
=9.5mΩ(typ.)@V
GS
= 10V
R
DS(ON)
=11.5mΩ(typ.)@V
GS
= 4.5V
100% Avalanche Tested
Reliable and Rugged
Halogen Free and Green Devices Available
(RoHS Compliant)
SOP8L
Pin Description
Applications
Switching Application
Power Management for DC/DC
Battery Protection
Ordering and Marking Information
Package Code
N-Channel MOSFET
S
S: SOP8L
Date Code
YYXXX WW
Assembly Material
G:Halogen Free
HY1103
YYXXXJWW G
Note:HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-
Nationfinish;which are fully compliant with RoHS.HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
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1
V1.0
HY1103S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(Tc=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Source Current-Continuous(Body Diode)
Tc=25°C
30
±20
150
-55 to 150
11
V
V
°C
°C
A
Mounted on Large Heat Sink
I
DM
I
D
Pulsed Drain Current *
Continuous Drain Current
Tc=25°C
Tc=25°C
Tc=100°C
Tc=25°C
Tc=100°C
80
11
7
2.5
1.0
50
80
L=0.3mH
22
A
A
A
W
W
°C/W
°C/W
P
D
R
Jc
R
JA
E
AS
Note:
*
**
Maximum Power Dissipation
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
SinglePulsed-Avalanche Energy **
mJ
Repetitive rating pulse width limited by max.junction temperature.
Limited by T
J
max , starting T
J
=25°C,
L =
0.3mH,
R
G
= 25Ω, V
GS
=10V.
Electrical Characteristics
(Tc =25°C Unless Otherwise Noted)
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
*
Drain-Source Breakdown Voltage
Drain-to-Source LeakageCurrent
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
V
GS=
0V
,I
DS
=250μA
Parameter
Test Conditions
HY1103
Min
30
-
-
1
-
Typ.
-
-
-
1.4
-
9.5
11.5
-
-
-
0.7
9
10
1
50
3
±100
11
13.5
1.0
-
-
Max
Unit
V
μA
μA
V
nA
mΩ
V
DS
=30V,V
GS
=0V
T
J
=125°C
V
DS
=V
GS
, I
DS
=250μA
V
GS
=
20V,V
DS
=0V
V
GS
=10V,I
DS
=6A
V
GS
=4.5V,I
DS
=5A
I
SD
=6A,V
GS
=0V
I
SD
=6A,dI
SD
/dt
=100A/μs
Diode Characteristics
V
SD
*
t
rr
Q
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
ns
nC
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2
V1.0
HY1103S
Electrical Characteristics (Cont.)
(Tc =25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
HY1103
Min
Typ.
Max
Unit
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Q
g
Q
gs
Q
gd
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Characteristics
V
DS
=24V, V
GS
=10V
I
D
=6A
-
-
-
29
4.5
7.4
-
-
-
nC
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=15V,R
G
=3
Ω,
I
DS
=6A,V
GS
=10V
V
GS
=0V
,
V
DS
=0V,F=1
MHz
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
-
-
-
-
-
-
-
-
3
1050
184
115
5
9
16
6
-
-
-
-
-
-
-
-
ns
pF
Ω
Gate Charge
Note: *Pulse test pulse width
≤
300us duty cycle
≤
2%
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3
V1.0
HY1103S
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
Power Dissipation (w)
Tc-Case Temperature(
)
I
D
-Drain Current(A)
Tc-Case Temperature( )
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
I
D
-Drain Current(A)
Normalized Transient
V
DS
-Drain-Source Voltage(V)
Z
jc
Thermal
Impedance
Figure 5: Output Characteristics
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 6: Drain-Source On Resistance
V
DS
-Drain-Source Voltage (V)
R
DS(ON)
-ON-Resistance(mΩ)
I
D
-Drain Current(A)
I
D
-Drain Current(A)
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4
V1.0
HY1103S
Typical Operating Characteristics
Figure 7: On-Resistance vs. Temperature
Normalized On-Resistance
Figure 8: Source-Drain Diode Forward
Tj-Junction Temperature (
)
I
S
-Source Current (A)
V
SD
-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
V
DS
-Drain-Source Voltage (V)
V
GS
-Gate-Source Voltage (V)
C-Capacitance(pF)
Q
G
-Gate Charge (
)
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5
V1.0
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