LSF65R380GF datasheet, PDF - EEWORLD Datasheet

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LSF65R380GF: DescriptionDrain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 11A (Tc) Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 380mA @ 5.5A, 10V Maximum power Dissipation (Ta=25°C): 125W(Tc) Type: N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size1MB，13 Pages; ManufacturerLonten Semiconductor Co., Ltd.; Websitehttp://www.lonten.cc; Longteng Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the research and development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development and has built a first-class R&D center and application testing laboratory in China. The company has passed the ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application. The company has built a first-class R&D center and laboratory in China. The company's super junction power field effect transistor (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other series of products have the advantages of high energy efficiency, high reliability and high cost performance. They have been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; they continue to grow in the fields of new energy vehicle charging piles, on-board chargers, automotive motor drives, photovoltaic inverters, industrial inverters, UPS, and welding machine markets.

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LSF65R380GF Overview

Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 11A (Tc) Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 380mA @ 5.5A, 10V Maximum power Dissipation (Ta=25°C): 125W(Tc) Type: N-channel

LSF65R380GF Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	650V
Continuous drain current (Id) at 25°C	11A(Tc)
Gate-source threshold voltage	4.5V @ 250uA
Drain-source on-resistance	380mA @ 5.5A,10V
Maximum power dissipation (Ta=25°C)	125W(Tc)
type	N channel

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LSC65R380GF/LSD65R380GF/

LSE65R380GF/LSF65R380GF/LSG65R380GF

LonFET

Lonten N-channel 650V, 11A, 0.38Ω LonFET

Power MOSFET

Description

LonFET

Power MOSFET is fabricated using

advanced super junction technology.

The resulting

device has extremely low on resistance, making it

especially suitable for applications which require

superior power density and outstanding efficiency.

Product Summary

@ T

j,max

DS(on),max

g,typ

700V

0.38Ω

30A

23nC

Features



Ultra low R

DS(on)

Ultra low gate charge (typ. Q

= 23nC)

100% UIS tested

RoHS compliant

N-Channel MOSFET

TO-220F TO-220MF TO-263 TO-262

TO-252

Applications



Power faction correction (PFC).

Switched mode power supplies (SMPS).

Uninterruptible power supply (UPS).

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Continuous drain current

( T

= 25°C )

( T

= 100°C )

Pulsed drain current

Gate-Source voltage

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current, repetitive

Power Dissipation TO-220MF ( T

= 25°C )

- Derate above 25°C

Power Dissipation TO-262 ( T

= 25°C )

- Derate above 25°C

Mounting torque To-262 ( M3 and M3.5 screws )

Mounting torque To-220MF ( M2.5 screws )

Operating and Storage Temperature Range

Continuous diode forward current

Diode pulse current

, T

STG

S,pulse

GSS

DSS

Symbol

Value

650

±30

270

0.5

0.26

125

-55 to +150

Unit

W/°C

Ncm

°C

Version 2.1,Sep-2019

www.lonten.cc

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