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PESDNC2FD12VB

Description
Polarity: Bidirectional Peak pulse current (10/1000us): 4A Clamping voltage: 27V Breakdown voltage (minimum): 14V Reverse shutdown voltage (typ.): 12V 12V, bidirectional, IR=1uA, (30KV contact , 30KV gap discharge)
CategoryDiscrete semiconductor    ESD diode   
File Size174KB,6 Pages
ManufacturerPrisemi
Websitehttp://www.prisemi.com/

Shanghai Xindao Electronic Technology Co., Ltd. is located in Zhangjiang High-tech Park. It is a high-tech enterprise dedicated to the research and development, design and sales of integrated circuit chips.

Core Conductor Electronics is actively committed to the technical research of semiconductor power devices and high-end integrated circuit chips. The company's scientific research investment has increased by more than 70% for many consecutive years, and has established a first-class laboratory in China, undertaking a number of Shanghai and national scientific research projects.

Providing you with excellent products, excellent quality, and excellent services is the constant pursuit of Xindao Electronics. Over the years, Xindao Electronics has always adhered to the core of user needs. While focusing on the development of the domestic market, it has actively expanded overseas markets. At present, its products have been exported to the United States, Japan, South Korea, Southeast Asia and other countries and regions. Xindao Electronics has won the trust and praise of many customers with high-quality products and first-class services, and established a good brand image for the company.

Download Datasheet Parametric View All

PESDNC2FD12VB Overview

Polarity: Bidirectional Peak pulse current (10/1000us): 4A Clamping voltage: 27V Breakdown voltage (minimum): 14V Reverse shutdown voltage (typ.): 12V 12V, bidirectional, IR=1uA, (30KV contact , 30KV gap discharge)

PESDNC2FD12VB Parametric

Parameter NameAttribute value
polarityBidirectional
Peak pulse current (10/1000us)4A
clamping voltage27V
Breakdown voltage (minimum value)14V
Reverse shutdown voltage (typ)12V

PESDNC2FD12VB Preview

Download Datasheet
PESDNC2FD12VB
ESD Protector
Description
The PESDNC2FD12VB protects sensitive semiconductor components from
damage or upset due to electrostatic discharge (ESD) and other voltage induced
transient events. They feature large cross-sectional area junctions for conducting
high transient currents, offer desirable electrical characteristics for board level
protection, such as fast response time, low operating voltage. It gives designer
the flexibility to protect one bi-directional line in applications where arrays are not
practical.
Feature
90W peak pulse power per line (t
P
= 8/20μs)
DFN1006-2L package
Replacement for MLV(0402)
Bidirectional configurations
Response time is typically < 1ns
Low clamping voltage
RoHS compliant
Transient protection for data lines to
IEC61000-4-2(ESD) ±
30KV(air), ±
30KV(contact);
IEC61000-4-4 (EFT) 40A (5/50ns)
Applications
Cellular phones
Portable devices
Digital cameras
Power supplies
Mechanical Characteristics
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260℃
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
Electronics Parameter
Symbol
V
RWM
I
R
V
BR
I
T
I
PP
V
C
P
PP
C
J
I
F
V
F
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Peak Pulse Power
Junction Capacitance
Forward Current
Forward Voltage @ I
F
I
PP
V
C
V
BR
V
RWM
I
T
I
R
I
R
I
T
I
PP
I
V
V
RWM
V
BR
V
C
Rev.06.3
1
www.prisemi.com
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