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PESDMC2FD5VB

Description
Polarity: Bidirectional Peak pulse current (10/1000us): 4A (8/20us) Clamping voltage: 11V Breakdown voltage (minimum): - Reverse shutdown voltage (typ): 5V (Max)
CategoryDiscrete semiconductor    ESD diode   
File Size378KB,7 Pages
ManufacturerPrisemi
Websitehttp://www.prisemi.com/

Shanghai Xindao Electronic Technology Co., Ltd. is located in Zhangjiang High-tech Park. It is a high-tech enterprise dedicated to the research and development, design and sales of integrated circuit chips.

Core Conductor Electronics is actively committed to the technical research of semiconductor power devices and high-end integrated circuit chips. The company's scientific research investment has increased by more than 70% for many consecutive years, and has established a first-class laboratory in China, undertaking a number of Shanghai and national scientific research projects.

Providing you with excellent products, excellent quality, and excellent services is the constant pursuit of Xindao Electronics. Over the years, Xindao Electronics has always adhered to the core of user needs. While focusing on the development of the domestic market, it has actively expanded overseas markets. At present, its products have been exported to the United States, Japan, South Korea, Southeast Asia and other countries and regions. Xindao Electronics has won the trust and praise of many customers with high-quality products and first-class services, and established a good brand image for the company.

Download Datasheet Parametric View All

PESDMC2FD5VB Overview

Polarity: Bidirectional Peak pulse current (10/1000us): 4A (8/20us) Clamping voltage: 11V Breakdown voltage (minimum): - Reverse shutdown voltage (typ): 5V (Max)

PESDMC2FD5VB Parametric

Parameter NameAttribute value
polarityBidirectional
Peak pulse current (10/1000us)4A (8/20us)
clamping voltage11V
Breakdown voltage (minimum value)-
Reverse shutdown voltage (typ)5V (Max)

PESDMC2FD5VB Preview

Download Datasheet
PESDMC2FD5VB
Bi-directional 5V Low Capacitance ESD Protector
Description
The PESDMC2FD5VB protects sensitive semiconductor components from
damage or upset due to electrostatic discharge (ESD) and other voltage
induced transient events. They feature large cross-sectional area junctions
for
conducting
high
transient
currents,
offer
desirable
electrical
characteristics for board level protection, such as fast response time, low
operating voltage. It gives designer the flexibility to protect one bi-directional
line in applications where arrays are not practical.
DFN1006-2L(Bottom View)
Feature
40W peak pulse power per line (t
P
= 8/20μs)
DFN1006-2L package
Replacement for MLV(0402)
Bidirectional configurations
Response time is typically < 1ns
Low clamping voltage
RoHS compliant
Transient protection for data lines to
IEC61000-4-2(ESD) ±15KV(air), ±15KV(contact);
IEC61000-4-4 (EFT) 40A (5/50ns)
B1
Marking (Top View)
Applications
Cellular phones
Portable devices
Digital cameras
Power supplies
Circuit Diagram
Pin 1
Pin 2
Mechanical Characteristics
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260℃
Device meets MSL 1 requirements
Rev.06.3
1
www.prisemi.com
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