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DG15X12T2

CategoryDiscrete semiconductor    IGBT tube   
File Size228KB,9 Pages
ManufacturerStarPower Semiconductor
Websitehttp://www.powersemi.cc/
Jiaxing Star Semiconductor Co., Ltd. was established in April 2005. It is a national high-tech enterprise specializing in the research and development, production and sales of power semiconductor components, especially IGBTs, with a registered capital of 120 million yuan. It has R&D centers in China and Europe and is a leading company in the domestic IGBT field.
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DG15X12T2
IGBT Discrete
DOSEMI
IGBT
DG15X12T2
1200V/15A IGBT with Diode
General Description
DOSEMI IGBT Power Discrete provides ultra
low conduction loss as well as low switching loss.
They are designed for the applications such as
general inverters and UPS.
Features
Low V
CE(sat)
Trench IGBT technology
10μs short circuit capability
Low switching loss
Maximum junction temperature 175
o
C
Low inductance case
V
CE(sat)
with positive temperature coefficient
Fast & soft reverse recovery anti-parallel FWD
Lead free package
Typical Applications
Inverter for motor drive
AC and DC servo drive amplifier
Uninterruptible power supply
Equivalent Circuit Schematic
©2019 STARPOWER Semiconductor Ltd.
1/11/2019
1/9
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