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VSI013N08MS

Description
Drain-source voltage (Vdss): 80V Continuous drain current (Id) (at 25°C): 66A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 16mΩ @ 10A, 4.5V Maximum power dissipation (Ta =25°C): 83W Type: N channel N channel 80V 66A
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size342KB,5 Pages
ManufacturerVanguard
Websitehttp://www.vgsemi.com
The headquarters of Weizhao Semiconductor is located in the Nanshan Dashahe Innovation Corridor, a high-tech industrial park in Shenzhen Special Economic Zone, adjacent to the Shenzhen Institute of the Chinese Academy of Sciences and the Southern University of Science and Technology. It is a high-tech enterprise specializing in the design of discrete device series and the research and development of semiconductor microelectronics related products. With many years of experience in cooperation with well-known power supply manufacturers, it insists on deepening its roots in the field of discrete devices to enhance the performance competitiveness and market share of domestic discrete device brands. Weizhao focuses on achieving innovative, stable, efficient and low-cost overall solutions. After long-term efforts, it has become one of the few advanced IC design companies that have all series of low-voltage, medium-voltage and high-voltage high-power POWER MOSFET discrete devices, as well as special semiconductor process design capabilities. Products are widely used in computers, consumer electronics, LCD/LED displays, communication power supplies, industrial power supplies, as well as new energy industries such as solar energy, wind energy, and lithium batteries.
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VSI013N08MS Overview

Drain-source voltage (Vdss): 80V Continuous drain current (Id) (at 25°C): 66A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 16mΩ @ 10A, 4.5V Maximum power dissipation (Ta =25°C): 83W Type: N channel N channel 80V 66A

VSI013N08MS Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)80V
Continuous drain current (Id) at 25°C66A
Gate-source threshold voltage3V @ 250uA
Drain-source on-resistance16mΩ @ 10A,4.5V
Maximum power dissipation (Ta=25°C)83W
typeN channel

VSI013N08MS Preview

Download Datasheet
VSI013N08MS
80V/66A N-Channel Advanced Power MOSFET
Features
N-Channel
Enhancement mode
Very low on-resistance
R
DS(on)
@
V
GS
=4.5 V
Fast Switching
High conversion efficiency
Pb-free lead plating; RoHS compliant
V
DS
R
DS(on),TYP
@
V
GS
=10 V
R
DS(on),TYP
@
V
GS
=4.5V
I
D
80
10
12
66
TO-251
V
mΩ
mΩ
A
Part ID
VSI013N08MS
Package Type
TO-251
Marking
013N08M
Tape and reel
information
75pcs/Tube
Maximum ratings, at
T
j
=25 °C, unless otherwise specified
Symbol
Parameter
Drain-Source breakdown voltage
Diode continuous forward current
Continuous drain current@VGS=10V
Pulse drain current tested
Avalanche energy, single pulsed
Maximum power dissipation
Gate-Source voltage
Storage and operating temperature range
Rating
80
Unit
V
A
A
A
A
mJ
W
V
°C
V
(BR)DSS
I
S
T
C
=25°C
T
C
=25°C
T
C
=70°C
T
C
=25°C
60
66
43
260
225
I
D
I
DM
EAS
P
D
V
GS
T
C
=25°C
83
±20
-55 to 175
T
STG
T
J
Thermal Characteristics
Symbol
R
JC
R
JA
Parameter
Thermal Resistance-Junction to Case
Thermal Resistance Junction-Ambient
Typical
1.8
50
Unit
°C/W
°C/W
Copyright Vanguard Semiconductor Co., Ltd
Rev V – Oct.28
th
, 2015
www.vgsemi.com
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