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S-KBP210G-TU-LT

Description
Reverse peak voltage: 1000V Average rectified current (Io): 2A Forward voltage drop (Vf): 1.1V @ 2A
CategoryDiscrete semiconductor    Rectifier bridge   
File Size125KB,4 Pages
ManufacturerLITE-ON SEMICONDUCTOR
Websitehttp://www.liteon-semi.com/
Dynatronics Corporation (Taiwan Stock Code: 5305) was founded in 1990. The company is headquartered in Neihu District, Taipei City, and has established five business and production bases in Keelung, Hsinchu, Wuxi, China, and Shanghai. In order to strengthen customer service and expand new markets, Dynatronics will continue to establish more business and technical support service bases in key cities in mainland China and the Asia-Pacific region.
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S-KBP210G-TU-LT Overview

Reverse peak voltage: 1000V Average rectified current (Io): 2A Forward voltage drop (Vf): 1.1V @ 2A

S-KBP210G-TU-LT Parametric

Parameter NameAttribute value
Reverse peak voltage1000V
Average rectified current (Io)2A
Forward voltage drop (Vf)1.1V @ 2A

S-KBP210G-TU-LT Preview

Download Datasheet
KBP204G~KBP210G
GLASS PASSIVATED BRIDGE RECTIFIERS
REVERSE VOLTAGE – 400 to 1000 Volts
FORWARD CURRENT – 2.0 Ampere
KBP
KBP
DIM.
A
B
MIN.
14.25
3.35
10.20
14.25
1.40
1.80
0.80
3.56
MAX.
14.75
3.65
10.60
14.73
1.70
2.20
1.10
4.06
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Reliable low cost construction utilizing molded plastic
technique
The plastic material has UL flammability classification
94V-0
UL recognized file #95060
A
F
K
E C
+ ~ ~ -
B
M
L
D
G
H
C
D
d
E
F
G
H
I
J
K
L
M
I
MECHANICAL DATA
J
d
Polarity : As marked on body
Weight : 0.05 ounces, 1.52 grams
Mounting position : Any
0.35
0.55
1.22
1.42
0.76
0.86
2.7 x 45 (Typ.)
-
-
3
2
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
°C
ambient temperature unless otherwise specified.
CHARACTERISTICS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current @T
C
=100°C
Peak Forward Surge Current
8.3ms single half sine-wave
Peak Forward Surge Current
1.0ms single half sine-wave
@ Tj = 25
@ T
J
= 125℃
@ Tj = 25
@ T
J
= 125℃
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
I
FSM
V
F
KBP204G
400
280
400
KBP206G
600
420
600
2.0
75
65
150
130
1.1
5.0
500
KBP208G
800
560
800
KBP210G
1000
700
1000
UNIT
V
V
V
A
A
A
V
uA
A S
pF
2
Maximum Forward Voltage at 2.0A DC
Maximum DC Reverse Current at rated
Blocking Voltage
I t Rating for fusing (3ms
t
8.3ms)
Typical Junction Capacitance per element (Note 1)
2
@Tj=25°C
@Tj=125°C
I
R
I t
C
J
R
Θ
JC
2
17.5
25
10
18
40
-55 to 150
-55 to 150
Typical thermal resistance (Note 2)
R
Θ
JL
R
Θ
JA
°C/W
Operation Temperature Range
Storage Temperature Range
T
J
T
STG
°C
°C
Note: (1) Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
(2) Thermal Resistance Junction to Case, Lead and Ambient.
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