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G2045CTFW

Description
DC reverse withstand voltage (Vr): 45V Average rectified current (Io): 20A Forward voltage drop (Vf): 500mV @ 10A 45V, 20A, VF=0.5V@10A
CategoryDiscrete semiconductor    Schottky diode   
File Size82KB,3 Pages
ManufacturerLITE-ON SEMICONDUCTOR
Websitehttp://www.liteon-semi.com/
Dynatronics Corporation (Taiwan Stock Code: 5305) was founded in 1990. The company is headquartered in Neihu District, Taipei City, and has established five business and production bases in Keelung, Hsinchu, Wuxi, China, and Shanghai. In order to strengthen customer service and expand new markets, Dynatronics will continue to establish more business and technical support service bases in key cities in mainland China and the Asia-Pacific region.
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G2045CTFW Overview

DC reverse withstand voltage (Vr): 45V Average rectified current (Io): 20A Forward voltage drop (Vf): 500mV @ 10A 45V, 20A, VF=0.5V@10A

G2045CTFW Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)45V
Average rectified current (Io)20A
Forward voltage drop (Vf)500mV @ 10A

G2045CTFW Preview

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G2045CTFW
TRENCH SCHOTTKY RECTIFIERS
FEATURES
REVERSE VOLTAGE
FORWARD CURRENT
– 45 Volts
– 20 Amperes
Trench Schottky technology
Low power loss, high efficiency
Low forward drop voltage
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
MECHANICAL DATA
ITO-220AB(WB)
Case: ITO-220AB molded plastic
Case Material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI.)
"Halogen-free".
Terminals: Matte Tin
Lead Free Finish, RoHS Compliant
Polarity: As marked on the body
Weight: 0.05 ounces, 1.558 grams (Approximate)
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
°C
ambient temperature unless otherwise specified.
ABSOLUTE RATINGS
PARAMETER
Maximum Repetitive Peak Reverse Voltage
Maximum DC Blocking Voltage
Average Rectified Output Current per device
Non-repetitive Peak Forward Surge Current
single half sine-wave
@Tc=110°C
tp=8.3ms
SYMBOL
V
RRM
V
DC
I
F
I
FSM
T
J,
T
STG
VALUE
45
45
20
180
-55 to +150
UNIT
V
V
A
A
°
C
Operating junction and Storage temperature range
STATIC ELECTRICAL CHARACTERISTICS
Parameter
Maximum Forward Voltage Note(1)
Maximum DC Reverse Current
Junction Capacitance per element
Test condition
IF=10A
IF=10A
VR=45V
@Tj=25°
C
@Tj=125°
C
@Tj=25°
C
@Tj=125°
C
Symbol
VF
IR
Cj
Typ.
-
0.45
-
-
1260
Max.
0.5
-
0.5
100
-
Unit
V
mA
mA
pF
f=1MHz, VR=4V
THERMAL CHARACTERISTICS
Parameter
Typical thermal resistance Junction (Note 2&3)
Note :
(1)
(2)
(3)
SYMBOL
R
Θ
JC
R
Θ
JL
R
Θ
JA
VALUE
3
4
15
UNIT
°
C/W
REV. 4, Jan -2017, KTHC126
300us Pulse Width, 2% Duty Cycle.
Thermal Resistance Junction to Case, Lead and Ambient.
Device mounted on 72 x 75 x 2 mm Copper plate.
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