MH253
Specifications
High Sensitivity Omni-Polar Hall Effect Switch
MH253 Hall-effect sensor is a temperature stable, stress-resistant switch. Superior
high-temperature performance is made possible through a dynamic offset cancellation that
utilizes chopper-stabilization. This method reduces the offset voltage normally caused by
device over molding, temperature dependencies, and thermal stress.
MH253 includes the following on a single silicon chip: voltage regulator, Hall voltage
generator, small-signal amplifier, chopper stabilization, Schmitt trigger, open-drain output.
Advanced CMOS wafer fabrication processing is used to take advantage of low-voltage
requirements, component matching, very low input-offset errors, and small component
geometries.
MH253 is rated for operation between the ambient temperatures –40
℃
and +85
℃
for the
E temperature range. The four package styles available provide magnetically optimized
solutions for most applications. Package types SO is an SOT-23(1.1 mm nominal height), SQ is
an QFN2020-3(0.55 mm nominal height), a miniature low-profile surface-mount package,
while package UA is a three-lead ultra mini SIP for through-hole mounting.
The package type is in a
Halogen Free
version was verified by third party Lab.
Features and Benefits
CMOS Hall IC Technology
Solid-State Reliability much better than reed switch
Omni polar output switches with absolute value of North or South pole from magnet
Low power consumption(2.6mA)
High Sensitivity for reed switch replacement
100% tested at 125℃ for K.
Small Size
ESD HBM ±4KV Min
COST competitive
Applications
Solid state switch
Lid close sensor for power supply devices
Magnet proximity sensor for reed switch replacement in high duty cycle applications.
Safety Key on sporting equipment
Revolution counter
Speed sensor
Position Sensor
Rotation Sensor
Safety Key
091713
Page 1 of 5
Rev. 1.04
MH253
Specifications
High Sensitivity Omni-Polar Hall Effect Switch
Ordering Information
XXXXXXXXX - X
Sorting Code
Package type
Temperature Code
Part number
Company Name and Product Category
Company Name and Product Category
MH:MST Hall Effect/MP:MST Power IC
Part number
181,182,183,184,185,248,249,276,477,381,381F,381R,382…..
If part # is just 3 digits, the forth digit will be omitted.
Temperature range
E: 85
℃,
I: 105
℃,
K: 125
℃,
L: 150
℃
Package type
UA:TO-92S,VK:TO-92S(4pin),VF:TO-92S(5pin),SO:SOT-23,
SQ:QFN-3,ST:TSOT-23,SN:SOT-553,SF:SOT-89(5pin),
SS:TSOT-26,SD:DFN-6,SG:SOT-89(3pin)
Sorting
α,β,Blank…..
Part No.
MH253KUA
MH253EUA
MH253ESO
MH253ESQ
Temperature Suffix
K (-40℃
to
+ 125℃)
E (-40℃
to
+ 85℃)
E (-40℃
to
+ 85℃)
E (-40℃
to
+ 85℃)
Package Type
UA (TO-92S)
UA (TO-92S)
SO (SOT-23)
SQ (QFN2020-3)
Custom sensitivity selection is available by MST sorting technology
Functional Diagram
V
DD
Out
Voltage
Regulator
Amp
Hall
Sensor
GND
Note:
Static sensitive device; please observe ESD precautions. Reverse V
DD
protection is not included. For reverse
voltage protection, a 100
Ω
resistor in series with V
DD
is recommended.
091713
Page 2 of 5
Rev. 1.04
MH253
Specifications
High Sensitivity Omni-Polar Hall Effect Switch
Absolute Maximum Ratings
At (Ta=25
℃
)
Characteristics
Supply voltage,(V
DD
)
Output Voltage,(V
out
)
Reverse voltage,
(V
DD
) (V
OUT
)
Magnetic flux density
Output current,(I
OUT
)
Operating Temperature Range, (Ta)
Values
7
6
-0.3
Unlimited
25
“E” version
“K” version
-40 to +85
-40 to +125
-55 to +150
150
Unit
V
V
V
Gauss
mA
℃
℃
℃
℃
℃/W
℃/W
mW
Storage temperature range, (Ts)
Maximum Junction Temp,(Tj)
Thermal Resistance
(θ
JA
)
UA / SO / SQ
(θ
JC
)
UA / SO / SQ
206 / 543 / 543
148 / 410 /410
606 / 230 / 230
Package Power Dissipation, (P
D
)
UA / SO / SQ
Note:
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximum-
rated conditions for extended periods may affect device reliability.
Electrical Specifications
DC Operating Parameters T
A
=+25
℃
, V
DD
=5.0V
Parameters
Test Conditions
Supply Voltage,(V
DD
)
Supply Current,(I
DD
)
Output Low Voltage,(V
DSON
)
Output Leakage Current,(I
off
)
Output Rise Time,(T
R
)
Output Fall Time,(T
F
)
Electro-Static Discharge
Operate Point,
Release Point
Hysteresis,(B
HYS
)
(B
OPS
)
(B
OPN
)
(B
RPS
)
(B
RPN
)
Operating
Average
I
OUT
=10mA
I
OFF
B<BRP, V
OUT
= 5V
Min
2.5
Typ
2.6
Max
6
6.0
400
10
0.45
0.45
Units
V
mA
mV
uA
uS
uS
KV
R
L
=10kΩ, CL =20pF
R
L
=10kΩ; CL =20pF
HBM
S pole to branded side, B > BOP, Vout On
N pole to branded side, B > BOP, Vout On
S pole to branded side, B < BRP, Vout Off
N pole to branded side, B < BRP, Vout Off
|BOPx - BRPx|
4
30
-60
5
-30
25
-25
5
-5
60
Gauss
Gauss
Gauss
Typical Application circuit
Vcc
R1
VDD
C1：10nF
C2：100pF
R1：10KΩ
Out
C1
253
GND
Out
C2
091713
Page 3 of 5
Rev. 1.04
MH253
Specifications
High Sensitivity Omni-Polar Hall Effect Switch
Sensor Location, Package Dimension and Marking
MH253 Package
UA Package
Hall Chip location
2.00
0.9
253
XXX
NOTES:
1).Controlling dimension: mm
2).Leads must be free of flash
and plating voids
3).Do not bend leads within 1
mm of lead to package
interface.
4).PINOUT:
Pin 1
Pin 2
Pin 3
V
DD
Hall Sensor
Location
Mark
Output Pin Assignment
(Top view)
XXX
1
2
3
253
GND
Output
V
DD
GND
Out
SO Package
(Top View)
Hall Plate Chip Location
(Bottom view)
3
3
253XX
1
2
Hall Sensor
Location
0.80
2
1
1.45
NOTES:
1. PINOUT (See Top View at left :)
Pin 1
Pin 2
Pin 3
V
DD
Output
GND
2. Controlling dimension: mm
3. Lead thickness after solder plating
will be 0.254mm maximum
091713
Page 4 of 5
Rev. 1.04
MH253
Specifications
High Sensitivity Omni-Polar Hall Effect Switch
SQ Package
Hall Plate Chip Location
(Top view)
NOTES:
1.
PINOUT (See Top View
at left)
Pin 1
Pin 2
Pin 3
V
DD
Output
GND
Hall Sensor
Location
253
XX
1
3
1
1
2
1
2
2.
Controlling dimension:
mm;
3.
Chip rubbing will be
10mil
maximum;
3
4.
Chip must be in PKG.
center.
091713
Page 5 of 5
Rev. 1.04
Microcontroller MCU
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