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MBR20150FCT_TO_00001

Description
DC reverse withstand voltage (Vr): 150V Average rectified current (Io): 20A Forward voltage drop (Vf): 900mV @ 10A
CategoryDiscrete semiconductor    Schottky diode   
File Size271KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR20150FCT_TO_00001 Overview

DC reverse withstand voltage (Vr): 150V Average rectified current (Io): 20A Forward voltage drop (Vf): 900mV @ 10A

MBR20150FCT_TO_00001 Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)150V
Average rectified current (Io)20A
Forward voltage drop (Vf)900mV @ 10A

MBR20150FCT_TO_00001 Preview

Download Datasheet
MBR2040FCT SERIES
20 AMPERES SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Low power loss, high efficiency.
• High current capability
• For use in low voltage, high frequency inverters free wheeling,
and polarlity protection applications.
• Lead free in compliance with EU RoHS 2011/65/EU directive
• Green molding compound as per IEC61249 Std. . (Halogen Free)
40 to 200 Volt
CURRENT
20 Ampere
MECHANICAL DATA
• Case: ITO-220AB molded plastic
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Weight: 0.056 ounces, 1.6 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Maxi mum Recurrent P eak Reverse Voltage
Maxi mum RMS Voltage
Maxi mum DC Blocki ng Voltage
Maxi mum Average Forward Current
(See fig.1)
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
R
θJC
T
J
,T
STG
MBR2040FCT MB R2045FC T MB R2050FC T MB R2060FC T MB R2080FCT MB R2090FCT MB R20100FCT MBR20150FCT MB R20200FCT
UNITS
V
V
V
A
A
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
20
200
90
63
90
100
70
100
150
105
150
200
140
200
Peak Forward S urge Current : 8.3ms si ngle half sine-
wave superi mposed on rated load
Maxi mum Forward Voltage at 10A, per leg
Maxi mum DC Reverse Current at Rated DC T
J
=25
O
C
Blocki ng Voltage
T
J
=125
O
C
Typical Thermal Resi stance
Operati ng and Storage Juncti on Temperature Range
Notes :
0.7
0.75
0.05
20
2
0.8
0.9
V
mA
O
C/W
O
-55 to + 150
-65 to +175
C
Both Bonding and Chip structure are available.
October 14,2016-REV.08
PAGE . 1
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