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PJ2301_R1_00001

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 3.1A Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 100mΩ @ 3.1A, 4.5V Maximum power consumption Dispersion (Ta=25°C): 1.25W Type: P-channel
CategoryDiscrete semiconductor    The transistor   
File Size289KB,6 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJ2301_R1_00001 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 3.1A Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 100mΩ @ 3.1A, 4.5V Maximum power consumption Dispersion (Ta=25°C): 1.25W Type: P-channel

PJ2301_R1_00001 Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Codecompliant

PJ2301_R1_00001 Preview

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PPJ2301
20V P-Channel Enhancement Mode MOSFET
Voltage
Features
-20 V
Current
-3.1A
SOT-23
Unit: inch(mm)
R
DS(ON)
, V
GS
@-4.5V, I
D
@-3.1A<100mΩ
R
DS(ON)
, V
GS
@-2.5V, I
D
@-2.0A<135mΩ
R
DS(ON)
, V
GS
@-1.8V, I
D
@-1.1A<190mΩ
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
o
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T
a
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
R
θJA
LIMIT
UNITS
V
V
A
A
W
mW/
o
C
o
-20
+12
-3.1
-12.4
1.25
10
-55~150
100
o
Operating Junction and Storage Temperature Range
Typical Thermal Resistance
-
Junction to Ambient
(Note 3)
C
C/W
November 9,2016-REV.03
Page 1
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