PDH0980 datasheet, PDF - EEWORLD Datasheet

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PDH0980: DescriptionDrain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 150A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 4.2mΩ @ 20A, 10V Maximum power Dissipation (Ta=25°C): 275W(Tc) Type: N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size633KB，5 Pages; ManufacturerPotens; Websitehttp://www.potens-semi.com; Potens is a Taiwanese semiconductor company with an excellent R&D team. The core members of the team are all senior executives of APEC in Taiwan and have rich R&D experience. Potens is currently committed to the design and development of power semiconductors, especially the full range of MOSFETs, which is at a very high level in the industry.

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PDH0980 Overview

Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 150A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 4.2mΩ @ 20A, 10V Maximum power Dissipation (Ta=25°C): 275W(Tc) Type: N-channel

PDH0980 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	100V
Continuous drain current (Id) at 25°C	150A(Tc)
Gate-source threshold voltage	2.5V @ 250uA
Drain-source on-resistance	4.2mΩ @ 20A,10V
Maximum power dissipation (Ta=25°C)	275W(Tc)
type	N channel

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100V N-Channel MOSFETs

General Description

These N-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

PDH0980

BVDSS

100V

Features



100V,150A, RDS(ON) =4.2mΩ@VGS = 10V



Improved dv/dt capability



Fast switching



100% EAS Guaranteed



Green Device Available

RDSON

4.2m

150A

TO263 Pin Configuration

Applications



Networking



Load Switch



LED applications



Quick Charger

Absolute Maximum Ratings

Tc=25℃ unless otherwise noted

Symbol

EAS

IAS

STG

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous (T

=25℃)

Drain Current – Continuous (T

=100℃)

Drain Current – Pulsed

Single Pulse Avalanche Energy

Single Pulse Avalanche Current

Power Dissipation (T

=25℃)

Power Dissipation – Derate above 25℃

Storage Temperature Range

Operating Junction Temperature Range

Parameter

Rating

100

+20/-12

150

600

378

275

2.22

-50 to 150

Units

W/℃

℃

Thermal Characteristics

Symbol

θJA

θJC

Parameter

Thermal Resistance Junction to ambient

Thermal Resistance Junction to Case

Typ.

---

Max.

0.45

Unit

℃/W

Potens semiconductor corp.

Ver.1.01

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