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BZX84C3V9

Description
Accuracy: - Voltage regulation value (typical value): 3.9V Reverse leakage current: 3uA @ 1V Maximum power: 350mW 3.9V 0.35W
CategoryDiscrete semiconductor    Zener diode   
File Size254KB,3 Pages
ManufacturerSEMTECH ELECTRONICS LTD.
Websitehttp://www.semtech.com.hk/
SAST is one of the largest discrete semiconductor manufacturers in the world. We produce high-quality semiconductor components through leading-edge production technology. Our main products include switches, voltage regulators, rectifiers, Schottky diodes, triggers, varactor diodes and transistors, as well as V-Chip surface-mount aluminum electrolytic capacitors, RFID radio frequency identification tags and LEDs, which are used in various types of electronic devices in the industrial, computer, automotive, consumer, telecommunications and lighting markets.
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BZX84C3V9 Overview

Accuracy: - Voltage regulation value (typical value): 3.9V Reverse leakage current: 3uA @ 1V Maximum power: 350mW 3.9V 0.35W

BZX84C3V9 Parametric

Parameter NameAttribute value
Accuracy-
Stable voltage value (typical value)3.9V
Reverse leakage current3uA @ 1V
Maximum power350mW

BZX84C3V9 Preview

Download Datasheet
BZX84C…Series
Silicon Planar Zener Diodes
This series of Zener diodes is offered in the convenient,
surface mount plastic TO-236 package. These devices
are designed to provide voltage regulation with minimum
space requirement. They are well suited for applications
such as cellular phones, hand held portables, and high
density PC boards.
3
1
2
1. Anode 3. Cathode
TO-236 Plastic Package
Features
• Zener breakdown voltage range - 2.0 V to 75 V
• Package designed for optimal automated board
assembly
• Small package size for high density applications
Absolute Maximum Ratings (T
a
= 25℃)
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
1)
Junction and Storage Temperature Range
1)
Symbol
P
D
R
JA
T
j
, T
stg
Value
350
357
- 65 to + 150
Unit
mW
℃/W
Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina
SEMTECH ELECTRONICS LTD.
®
Dated: 16/03/2015 Rev: 03
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