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MMBTA14G-AE3-R

Description
Rated power: 350mW Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 30V (Min) Transistor type: NPN NPN, Vceo=30V, Ic=500mA
CategoryDiscrete semiconductor    Darlington tube   
File Size140KB,3 Pages
ManufacturerUTC(Unisonic Technologies Co., Ltd.)
Websitehttp://www.utc-ic.com/
Founded in 1990, Youshun Technology Co., Ltd. focuses on the research and development, design, manufacturing, packaging, testing and marketing of analog ICs and discrete components.
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MMBTA14G-AE3-R Overview

Rated power: 350mW Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 30V (Min) Transistor type: NPN NPN, Vceo=30V, Ic=500mA

MMBTA14G-AE3-R Parametric

Parameter NameAttribute value
rated power350mW
Collector current Ic500mA
Collector-emitter breakdown voltage Vce30V (Min)
Transistor typeNPN

MMBTA14G-AE3-R Preview

Download Datasheet
UNISONIC TECHNOLOGIES CO., LTD
MMBTA14
DARLINGTON TRANSISTOR
3
NPN SILICON TRANSISTOR
DESCRIPTION
The UTC
MMBTA14
is a Darlington transistor.
2
1
SOT-23
FEATURES
3
2
1
(JEDEC TO-236)
* Collector-Emitter Voltage: V
CES
= 30V
* Collector Dissipation: P
C(MAX)
= 350 mW
SOT-323
ORDERING INFORMATION
Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
MMBTA14L-AE3-R
MMBTA14G-AE3-R
SOT-23
MMBTA14L-AL3-R
MMBTA14G-AL3-R
SOT-323
Note: Pin Assignment: E: Emitter
B: Base
C: Collector
MARKING
www.unisonic.com.tw
Copyright © 2017 Unisonic Technologies Co., Ltd
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