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4N60L-B-TN3-R

Description
Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 4A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 2.5Ω @ 2.2A, 10V Maximum power dissipation ( Ta=25°C): 50W Type: N channel N channel, 600V, 4A
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size465KB,9 Pages
ManufacturerUTC(Unisonic Technologies Co., Ltd.)
Websitehttp://www.utc-ic.com/
Founded in 1990, Youshun Technology Co., Ltd. focuses on the research and development, design, manufacturing, packaging, testing and marketing of analog ICs and discrete components.
Download Datasheet Parametric View All

4N60L-B-TN3-R Overview

Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 4A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 2.5Ω @ 2.2A, 10V Maximum power dissipation ( Ta=25°C): 50W Type: N channel N channel, 600V, 4A

4N60L-B-TN3-R Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)600V
Continuous drain current (Id) at 25°C4A
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance2.5Ω @ 2.2A,10V
Maximum power dissipation (Ta=25°C)50W
typeN channel

4N60L-B-TN3-R Preview

Download Datasheet
UNISONIC TECHNOLOGIES CO., LTD
4N60
4A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
4N60
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and
have a high rugged avalanche characteristics. This power
MOSFET is usually used at high speed switching
applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* R
DS(ON)
< 2.5Ω @ V
GS
= 10 V, I
D
= 2.2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness
SYMBOL
www.unisonic.com.tw
Copyright © 2017 Unisonic Technologies Co., Ltd
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