SMBJ36CA datasheet, PDF - EEWORLD Datasheet

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SMBJ36CA: DescriptionPolarity: Bidirectional Peak pulse current (10/1000us): 10.3A Clamping voltage: 58.1V Breakdown voltage (minimum): 40V Reverse shutdown voltage (typ.): 36V; CategoryDiscrete semiconductor diode; File Size2MB，7 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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SMBJ36CA Overview

Polarity: Bidirectional Peak pulse current (10/1000us): 10.3A Clamping voltage: 58.1V Breakdown voltage (minimum): 40V Reverse shutdown voltage (typ.): 36V

SMBJ36CA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Code	compliant
ECCN code	EAR99
Breakdown voltage nominal value	42.1 V
Maximum clamping voltage	58.1 V
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
polarity	BIDIRECTIONAL
Maximum repetitive peak reverse voltage	36 V
surface mount	YES

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RoHS

SMBJ SERIES

Surface Mount Transient Voltage Suppressors

Features

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in Unidirectional and Bidirectional

COMPLIANT

• 600 W peak pulse power capability with a 10/1000 µ waveform,

repetitive rate (duty cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020C, LF max peak of 260 °

• Solder Dip 260 °C, 10 seconds

• Component in accordance to RoHS 2002/95/EC and WEEE

2002/96/EC

Typical Applications

Use in sensitive electronics protection against voltage transients

induced by inductive load switching and lighting on ICs, MOSFET,

signal lines of sensor units for consumer, computer, industrial,

telecommunication.

Mechanical Data

●

Package:

DO-

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant, halogen-free

●

Terminals:

Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

●

Polarity:

Color band denotes cathode end

■

Maximum Ratings

(Ta=25℃ Unless otherwise specified

）

PARAMETER

Peak power dissipation, with a 10/1000us waveform (1) (2) (Fig.1)

Peak pulse current, with a 10/1000us waveform(1)

Power dissipation, on infinite heat sink at TL=75℃

Peak forward surge current, 8.3 ms single half sine-wave unidirectional

only (2)

Operating junction and storage temperature range

SYMBOL

PPPM

IPPM

IFSM

TJ,TSTG

UNIT

℃

Max

600

See Next Table

5.0

100

-55 to +150

■Electrical

Characteristics

（T

=25℃ Unless otherwise specified）

PARAMETER

Maximum instantaneous forward voltage

@ at 50A for unidirectional only (3)

SYMBOL

UNIT

VALUE

3.5/5.0

1/7

S-S103

Rev. 2.3, 28-Apr-14

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

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