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CS180N10A0

Description
Power device_MOSFET_12V-300V NMOS
CategoryMOSFET   
File Size660KB,10 Pages
ManufacturerCRMICRO
Websitehttps://www.crmicro.com/
The company takes power semiconductor devices and power/analog integrated circuits as its industrial foundation, and targets the industrial electronics, consumer electronics, automotive electronics, and 5G communications markets. It has technology development and manufacturing platforms for power devices, GaN, MEMS sensors, etc., and can provide high-reliability power devices, modules and other products and application solutions. The low-voltage, medium-voltage and high-voltage power device products developed by the company can be widely used in electric vehicles, solar energy, automotive electronics, mobile phone fast charging, white appliances, general switches, power supplies and other industries.
Download Datasheet Parametric View All

CS180N10A0 Overview

Power device_MOSFET_12V-300V NMOS

CS180N10A0 Parametric

Parameter NameAttribute value
PARTNUMBERCS180N10A0
PACKAGETO-263
POLARITYN
VDS100
IDA180
VTYPE104.1
VMAX104.9
VTYPE45-
VMAX45-
VGSMIN2
VGSMAX4
QGNC189
CISSPF9251
CRTIME202006
RN120

CS180N10A0 Preview

Download Datasheet
Silicon N-Channel
Power MOSFET
R
CS180N10 A0
General Description
CS180N10
A0,
the
silicon
N-channel
Enhanced
VDMOSFETs, is obtained by advanced Trench Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-263,
which accords with the RoHS standard.
V
DSS
I
D
Silicon limited current
I
D
Package limited current
P
D
(T
C
=25℃)
R
DS(ON)Typ
100
180
120
312.5
4.1
V
A
A
W
mΩ
Features:
Fast Switching
Low ON Resistance
Low Gate Charge
Low Reverse transfer capacitances
(Typical:418pF)
100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
Absolute
(T
J
= 25℃ unless otherwise specified)
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
P
D
T
J
,T
stg
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current T
C
= 25 °
Silicon limited
C
Continuous Drain Current T
C
= 25 °
Package limited
C
Continuous Drain Current T
C
= 100 °
C
Pulsed Drain Current T
C
= 25 °
C
Gate-to-Source Voltage
Rating
100
180
120
114
480
±20
1312
312.5
2.5
150,–55 to 150
Units
V
A
A
A
A
V
mJ
W
W/℃
a2
Single Pulse Avalanche Energy
Power Dissipation T
C
= 25 °
C
Derating Factor above 25°
C
Operating Junction and Storage Temperature Range
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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