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CS105N08B8

Description
Power device_MOSFET_12V-300V NMOS
CategoryMOSFET   
File Size446KB,10 Pages
ManufacturerCRMICRO
Websitehttps://www.crmicro.com/
The company takes power semiconductor devices and power/analog integrated circuits as its industrial foundation, and targets the industrial electronics, consumer electronics, automotive electronics, and 5G communications markets. It has technology development and manufacturing platforms for power devices, GaN, MEMS sensors, etc., and can provide high-reliability power devices, modules and other products and application solutions. The low-voltage, medium-voltage and high-voltage power device products developed by the company can be widely used in electric vehicles, solar energy, automotive electronics, mobile phone fast charging, white appliances, general switches, power supplies and other industries.
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CS105N08B8 Overview

Power device_MOSFET_12V-300V NMOS

CS105N08B8 Parametric

Parameter NameAttribute value
PARTNUMBERCS105N08B8
PACKAGETO-220AB
POLARITYN
VDS80
IDA105
VTYPE106.3
VMAX108
VTYPE45-
VMAX45-
VGSMIN2.2
VGSMAX3.8
QGNC61
CISSPF2948
CRTIME202006
RN135

CS105N08B8 Preview

Download Datasheet
Silicon
N-Channel
Power
MOSFET
R
CS105N08 B8
General Description
CS105N08
B8,
the
silicon
N-channel
Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is TO-220AB, which accords with the RoHS
standard.
V
DSS
I
D
Silicon limited current
I
D
Package limited
P
D
R
DS(ON)Typ
80
105
60
147
6.3
V
A
A
W
mΩ
Features:
l
Fast Switching
l
Low ON Resistance
(Rdson≤8
mΩ)
l
Low Gate Charge
l
Low Reverse transfer capacitances
l
100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
Absolute
(T
j
= 25℃ unless otherwise specified)
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
80
105
67
420
±20
420
147
1.17
150,–55 to 150
300
Units
V
A
A
A
V
mJ
W
W/℃
V
GS
E
AS
P
D
T
J
,T
stg
T
L
a2
Avalanche Energy
Power Dissipation T
C
= 25
°C
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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