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CS105N08A8

Description
Power device_MOSFET_12V-300V NMOS
CategoryMOSFET   
File Size494KB,10 Pages
ManufacturerCRMICRO
Websitehttps://www.crmicro.com/
The company takes power semiconductor devices and power/analog integrated circuits as its industrial foundation, and targets the industrial electronics, consumer electronics, automotive electronics, and 5G communications markets. It has technology development and manufacturing platforms for power devices, GaN, MEMS sensors, etc., and can provide high-reliability power devices, modules and other products and application solutions. The low-voltage, medium-voltage and high-voltage power device products developed by the company can be widely used in electric vehicles, solar energy, automotive electronics, mobile phone fast charging, white appliances, general switches, power supplies and other industries.
Download Datasheet Parametric View All

CS105N08A8 Overview

Power device_MOSFET_12V-300V NMOS

CS105N08A8 Parametric

Parameter NameAttribute value
PARTNUMBERCS105N08A8
PACKAGETO-220AB
POLARITYN
VDS80
IDA105
VTYPE106.2
VMAX108
VTYPE45-
VMAX45-
VGSMIN2
VGSMAX4
QGNC78
CISSPF3255
CRTIME202006
RN137

CS105N08A8 Preview

Download Datasheet
Silicon
N-Channel
Power
MOSFET
R
CS105N08 A8
General Description
CS105N08 A8, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve
switching performance and enhance the avalanche energy. This
device is suitable for use as a load switch and PWM
applications. The package form is TO-220AB, which accords with
the RoHS standard.
V
DSS
I
D
Silicon limited current
I
D
Package limited
P
D
R
DS(ON)Typ
80
105
60
138
6.2
V
A
A
W
mΩ
Features:
l
Fast Switching
l
Low ON Resistance
(Rdson≤8.0mΩ)
l
Low Gate Charge
l
Low Reverse transfer capacitances
l
100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
Absolute
(T
j
= 25℃ unless otherwise specified)
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
80
105
66
420
±20
462
138
1.11
150,–55 to 150
300
Units
V
A
A
A
V
mJ
W
W/℃
V
GS
E
AS
P
D
T
J
,T
stg
T
L
a2
Avalanche Energy
Power Dissipation T
C
= 25
°C
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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