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CS90N045A4

Description
Power device_MOSFET_12V-300V NMOS
CategoryMOSFET   
File Size783KB,9 Pages
ManufacturerCRMICRO
Websitehttps://www.crmicro.com/
The company takes power semiconductor devices and power/analog integrated circuits as its industrial foundation, and targets the industrial electronics, consumer electronics, automotive electronics, and 5G communications markets. It has technology development and manufacturing platforms for power devices, GaN, MEMS sensors, etc., and can provide high-reliability power devices, modules and other products and application solutions. The low-voltage, medium-voltage and high-voltage power device products developed by the company can be widely used in electric vehicles, solar energy, automotive electronics, mobile phone fast charging, white appliances, general switches, power supplies and other industries.
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CS90N045A4 Overview

Power device_MOSFET_12V-300V NMOS

CS90N045A4 Parametric

Parameter NameAttribute value
PARTNUMBERCS90N045A4
PACKAGETO-252
POLARITYN
VDS45
IDA90
VTYPE106
VMAX107.5
VTYPE458
VMAX4510
VGSMIN0.85
VGSMAX1.95
QGNC51.1
CISSPF2330
CRTIME202006
RN181

CS90N045A4 Preview

Download Datasheet
Silicon
N-Channel
Power
MOSFET
R
CS90N045 A4
General Description
CS90N045
A4,
the
silicon
N-channel
Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is TO-252, which accords with the RoHS standard.
V
DSS
I
D
P
D
R
DS(ON)Typ
45
90
86
6
V
A
W
mΩ
Features:
l
Fast Switching
l
Low ON Resistance
(Rdson≤7.5mΩ)
l
Low Gate Charge
l
Low Reverse transfer capacitances
l
100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
Absolute
(T
C
= 25℃ unless otherwise specified)
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current T
C
= 25
°C
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current T
C
= 25
°C
Gate-to-Source Voltage
Rating
45
90
51
360
±20
163
33
86
0.69
150,–55 to 150
Units
V
A
A
A
V
mJ
A
W
W/℃
V
GS
E
AS
I
AS
P
D
T
J
,T
stg
a2
a2
Avalanche Energy
Avalanche Current
Power Dissipation T
C
= 25
°C
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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