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2CR20K60A8C

Description
Power device_BJT&DIODES_Fast recovery diode
CategoryFast recovery diode   
File Size374KB,4 Pages
ManufacturerCRMICRO
Websitehttps://www.crmicro.com/
The company takes power semiconductor devices and power/analog integrated circuits as its industrial foundation, and targets the industrial electronics, consumer electronics, automotive electronics, and 5G communications markets. It has technology development and manufacturing platforms for power devices, GaN, MEMS sensors, etc., and can provide high-reliability power devices, modules and other products and application solutions. The low-voltage, medium-voltage and high-voltage power device products developed by the company can be widely used in electric vehicles, solar energy, automotive electronics, mobile phone fast charging, white appliances, general switches, power supplies and other industries.
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2CR20K60A8C Overview

Power device_BJT&DIODES_Fast recovery diode

2CR20K60A8C Parametric

Parameter NameAttribute value
PARTNUMBER2CR20K60A8C
GENERALDESCRIPTIO1
PACKAGETO-220AC
IFA20
VRRMMIN680
VRRMTYPE720
VFMAX2
VFTYPE1.4
IRMAX10
TRRMAX65
TRRTYPE48
IFSMMIN160
TEACHLEVEL/
CRTIME202004
RN5

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Download Datasheet
N
型快恢复整流二极管
2CR20K60 A8C
产品概述
2CR20K60 A8C
N
型硅外延超快恢复二极
管,采用平面制造工艺及
重金属掺杂工艺,具有½
正向压降、½反向漏电及
超快反向恢复速度等优
点。
R
产品特点
●超快反向恢复速度
●超½反向漏电
●½正向压降
●高抗浪涌½力
符 号
V
RRM
I
F
AV
V
F
(I
F
=20A)
trr(I
F
=0.5A)
特征参数
额定值
600
20
2.0
30
单 ½
V
A
V
ns
应用
开关电源
功率电路
通用整流
封装
TO-220AC
内部结构图
极限值
(Per
Diode)
(除非另有规定,T
a
= 25℃)
参 数 名 称
可重复峰值反向电压
平均整流电流
不重复峰值浪涌电流(8.3ms,正弦单波)
结温
贮存温度
符号
V
RRM
I
F
AV
I
FSM
T
j
T
stg
额定值
600
20
150
150
-55½150
单½
V
A
A
热 阻
(Per
Diode)
参数名称
结到壳的热阻
符号
R
θJC
最小值
典型值
最大值
1.03
单½
℃/W
电特性
(Per
Diode)
规 范 值
参 数 名 称
正向压降
符 号
测 试 条 件
最小
V
F
I
R
I
F
=20A ,T
j
=25℃
V
R
=600V, T
j
=25℃
V
R
=600V, T
j
=100℃
反向恢复时间
trr
I
F
=0.5A, I
R
=1A
I
RR
=0.25A
30
典型
最大
2.0
10
150
35
ns
V
μA
单½
反向漏电流
无锡华润华晶微电子有限公司
2020V01
1/4

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