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CRXI06D065G1

Description
Power device_SiC diode
Categorysemiconductor   
File Size1MB,7 Pages
ManufacturerCRMICRO
Websitehttps://www.crmicro.com/
The company takes power semiconductor devices and power/analog integrated circuits as its industrial foundation, and targets the industrial electronics, consumer electronics, automotive electronics, and 5G communications markets. It has technology development and manufacturing platforms for power devices, GaN, MEMS sensors, etc., and can provide high-reliability power devices, modules and other products and application solutions. The low-voltage, medium-voltage and high-voltage power device products developed by the company can be widely used in electric vehicles, solar energy, automotive electronics, mobile phone fast charging, white appliances, general switches, power supplies and other industries.
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CRXI06D065G1 Overview

Power device_SiC diode

CRXI06D065G1 Parametric

Parameter NameAttribute value
PARTNUMBERCRXI06D065G1
GENERALDESCRIPTIOG1
PACKAGETO-220-2
IFA6
VRRMMIN650
VRRMTYPE/
VFMAX1.8
VFTYPE1.5
IRMAX60
TRRMAX/
TRRTYPE/
IFSMMIN63
TEACHLEVEL/
CRTIME202007
RN8

CRXI06D065G1 Preview

Download Datasheet
CRXI06D065G1
Silicon Carbide Schottky Diode 650 V, 6 A, 18.2 nC
General Description
This product family offers state of the art
performance. It is designed for high frequency
applications where high efficiency and high
reliability are required. It is qualified and
manufactured on the productive 6 inch SiC line in
China fully owned by CR MICRO.
Features
• Low conduction loss due to low V
F
• Extremely low switching loss by tiny Q
C
• Highly rugged due to better surge current
• Industrial standard quality and reliability
Applications
• Server
• Telecom
• High performance SMPS
• Power factor correction
Product Summary
V
RRM
I
F
(T
C
=159℃)
Q
C
650 V
6A
18.2 nC
TO-220-2
Equivalent circuit
Package Marking
Part #
CRXI06D065G1
Marking
CRXI06D065G1
Package
TO-220-2
Page 1
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