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KBU6B

Description
Bridge Rectifier Diode, 6A, 100V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size172KB,2 Pages
ManufacturerGood-Ark
Environmental Compliance
Suzhou Gotech is a complete and comprehensive manufacturer of design, manufacturing, packaging and sales in the domestic semiconductor discrete device diode industry. From the independent development of front-end chips to various packaging technologies of back-end finished products, it has formed a complete industrial chain. The main products include leadless integrated circuit products and discrete device products with the latest packaging technology, automotive rectifier diodes, power modules, rectifier diode chips, silicon rectifier diodes, switching diodes, Zener diodes, micro bridge piles, military fuses, photovoltaic bypass modules, etc., with a total of more than 50 series and more than 1,500 varieties. The products are widely used in many fields such as aerospace, automobiles, green lighting, IT, household appliances and power supply devices for large equipment. Design and develop silver paste for solar cells and various electronic pastes, and develop and mass produce various new sensors in the field of the Internet of Things.
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KBU6B Overview

Bridge Rectifier Diode, 6A, 100V V(RRM),

KBU6B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGood-Ark
Reach Compliance Codecompliant
Is SamacsysN
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current250 A
Number of components4
Maximum operating temperature150 °C
Maximum output current6 A
Maximum repetitive peak reverse voltage100 V
surface mountNO
Base Number Matches1

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Download Datasheet
KBU4,6,8/RS6 SERIES
SINGLE-PHASE SILICON BRIDGE
Reverse Voltage -
50 to 1000 Volts
Forward Current -
4.0/6.0/8.0 Amperes
Features
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique
Plastic material has Underwriters Laboratory
Flammability Classification 94V-0
Surge overload rating: 200 amperes peak
Mounting Position: Any
Mounting Torgue: 5 ln. Ib. max.
D IM E N S IO N S
D IM
A
B
C
D
E
F
G
H
H1
J
K
M
N
P
Q
in c h e s
M in .
-
1 .0
0 .8 9 5
0 .2 6 0
0 .1 6 5
0 .1 4 0
0 .0 6 5
0 .6 6 0
0 .4 0 5
0 .1 8 0
0 .1 8 0
0 .1 8 5
0 .0 4 8
M ax.
0 .7 6 0
-
0 .9 3 5
0 .2 8 0
0 .1 8 5
0 .1 6 0
0 .0 8 5
0 .7 0 0
0 .4 5 5
0 .2 6 0
0 .2 2 0
0 .2 0 5
0 .0 5 2
M in .
-
2 5 .4
2 2 .7
6 .6
4 .2
3 .6
1 .7
1 6 .8
1 0 .3
4 .5
4 .6
4 .7
1 .2
mm
M ax.
1 9 .3
-
2 3 .7
7 .1
4 .7
4 .1
2 .2
1 7 .8
11 .3
6 .6
5 .6
5 .2
1 .3
N o te
0 .0 7 5 ( 1 .9 ) R . T y p . ( 2 P la c e s )
45
O
Maximum Ratings and Electrical Characteristics
Ratings at 25 ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
For capacitive load, derate current by 20%.
Symbols
KBU4A
KBU6A
KBU8A
RS601
KBU4B
KBU6B
KBU8B
RS602
KBU4D
KBU6D
KBU8D
RS603
KBU4G
KBU6G
KBU8G
RS604
KBU4J
KBU6J
KBU8J
RS605
KBU4K
KBU6K
KBU8K
RS606
KBU4M
KBU6M
KBU8M
RS607
Units
Maximum repetitive peak reverse voltage
Maximum RMS bridge input voltage
Maximum DC blocking voltage
Maximum average forward
rectified output current at
T
C
=100
T
A
=65 /40
/45
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
T
J
, T
STG
50
35
50
100
70
100
4.0
4.0
200.0
200
140
200
400
280
400
6.0
6.0
250.0
600
420
600
800
560
800
8.0
6.0
300.0
1000
700
1000
Volts
Volts
Volts
Amps
Amps
Peak forward surge current, 8.3mS single half sine-wave
superimposed on rated load
(MIL-STD-750 method 4066)
Maximum instantanous forward Voltage drop per
element at 3.0A/3.0A/8.0A
Maximum DC reverse leakage at rated
DC blocking voltage per element
Operating and storage temperature range
T
A
=25
T
C
=100
KBU4
1.0
10.0
100.0
KBU6
RS6
KBU8
1.0
10.0
200.0
-65 to +150
1.0
10.0
300.0
/
Volt
uA
mA
1
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