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NT256D64SH8BAGM-5T

Description
DDR DRAM Module, 32MX64, 0.6ns, CMOS, SODIMM-200
Categorystorage    storage   
File Size271KB,15 Pages
ManufacturerNanya
Websitehttp://www.nanya.com/cn
Nanya Technology Co., Ltd. aims to become the best DRAM (dynamic random access memory) supplier. It emphasizes customer service and strengthens product R&D and manufacturing through close cooperation with partners, thereby providing customers with comprehensive products and system solutions. In the face of the growing niche DRAM market, Nanya Technology not only provides products ranging from 128Mb to 8Gb, but also continues to expand product diversification. The main application markets include digital TV, set-top box (STB), network communication, tablet computer and other smart electronic systems, automotive and industrial products. At the same time, in order to meet the needs of the rapidly growing mobile and wearable device market, Nanya Technology is more focused on the research and development and manufacturing of low-power memory products. In recent years, Nanya Technology has actively operated in the niche memory market, focusing on the research and development of low-power and customized core product lines. In terms of process progress, it has also introduced 20nm process technology and is committed to the production of DDR4 and LPDDR4 products, hoping to further enhance its overall competitiveness. Nanya Technology will also continue to strengthen its high value-added niche memory products and perfect customer service, enhance core business operating performance, ensure the rights and interests of all shareholders, and create sustainable business value for the company.
Download Datasheet Parametric View All

NT256D64SH8BAGM-5T Overview

DDR DRAM Module, 32MX64, 0.6ns, CMOS, SODIMM-200

NT256D64SH8BAGM-5T Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerNanya
Parts packaging codeMODULE
package instructionDIMM,
Contacts200
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
access modeDUAL BANK PAGE BURST
Maximum access time0.6 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XDMA-N200
JESD-609 codee4
memory density2147483648 bit
Memory IC TypeDDR DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals200
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX64
Package body materialUNSPECIFIED
encapsulated codeDIMM
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.5 V
Nominal supply voltage (Vsup)2.6 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceGold (Au)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

NT256D64SH8BAGM-5T Preview

Download Datasheet
NT256D64SH8B0GM / NT256D64SH8BAGM
256MB : 32M x 64
PC3200 / PC2700 / PC2100 Unbuffered DDR SO-DIMM
200 pin Unbuffered DDR SO-DIMM
Based on DDR400/333/266 16Mx16 SDRAM
Features
• 200-Pin Small Outline Dual In-Line Memory Module (SO-DIMM)
• 32Mx64 Double Unbuffered DDR SO-DIMM based on 16Mx16
DDR SDRAM.
• Performance:
PC3200 PC2700 PC2100
Speed Sort
DIMM
CAS
Latency
f
CK
t
CK
Clock Frequency
Clock Cycle
-5/-5T
3
200
5
400
-6K
2.5
166
6
333
-75B
2.5
133
7.5
266
MHz
ns
MHz
Unit
• Data is read or written on both clock edges
• DRAM DLL aligns DQ and DQS transitions with clock transitions.
• Address and control signals are fully synchronous to positive
clock edge
• Programmable Operation:
- DIMM
CAS
Latency: 2, 2.5, 3
- Burst Type: Sequential or Interleave
- Burst Length: 2, 4, 8
- Operation: Burst Read and Write
• Auto Refresh (CBR) and Self Refresh Modes
• Automatic and controlled precharge commands
• 13/9/1 Addressing (row/column/bank)
• 7.8
µs
Max. Average Periodic Refresh Interval
• Serial Presence Detect
• Gold contacts
• SDRAMs in 66-pin TSOP Type II Package
f
DQ
DQ Burst Frequency
• Intended for 133, 166 and 200 MHz applications
• Inputs and outputs are SSTL-2 compatible
• V
DD
= V
DDQ
= 2.5V ± 0.2V (2.6V ± 0.1V for DDR400A/B)
• SDRAMs have 4 internal banks for concurrent operation
• Module has one physical bank
• Differential clock inputs
Description
NT256D64SH4B0GM and NT256D64SH4BAGM are unbuffered 200-Pin Double Data Rate (DDR) Synchronous DRAM Small Outline Dual
In-Line Memory Module (SO-DIMM), organized as a dual bank 16Mx64 high-speed memory array. The module uses eight 16Mx16 DDR
SDRAMs in 400 mil TSOP II packages. These DIMMs are manufactured using raw cards developed for broad industry use as reference
designs. The use of these common design files minimizes electrical variation between suppliers. All NANYA DDR SDRAM DIMMs provide
a high-performance, flexible 8-byte interface in a 2.66” long space-saving footprint.
The DIMM is intended for use in applications operating up to 200 MHz clock speeds and achieves high-speed data transfer rates of up to
400 MHz. Prior to any access operation, the device
CAS
latency and burst type/ length/operation type must be programmed into the DIMM
by address inputs A0-A12 and I/O inputs BA0 and BA1 using the mode register set cycle.
The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of serial PD
data are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
Ordering Information
Part Number
Speed
200MHz (5ns @ CL = 3)
NT256D64SH8BAGM-5
DDR400A
PC3200A 166MHz (6ns @ CL = 2.5)
133MHz (7.5ns @ CL = 2)
NT256D64SH8BAGM-5T
DDR400B
PC3200B
200MHz (5ns @ CL = 3)
166MHz (6ns @ CL = 2.5)
166MHz (6ns @ CL = 2.5)
133MHz (7.5ns @ CL = 2)
133MHz (7.5ns @ CL = 2.5)
100MHz (10ns @ CL = 2)
2.5V
32Mx64
Gold
2.6V
Power
Organization
Leads
NT256D64SH8BAGM-6K
NT256D64SH8BAGM-75B
NT256D64SH8B0GM-75B
DDR333
PC2700
DDR266B
PC2100
REV 1.0
12/11/2003
1
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
© NANYA TECHNOLOGY CORP.
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